Large magnetocurrents in double-barrier tunneling transistors

Lee, J.H.; Jun, Kisun; Shin, Kyung-Ho; Park, S.Y.; Hong, Jinki; Rhie, K.; Lee, B.C.

doi:10.1016/j.jmmm.2004.09.017

Cited by 5 publications

(1 citation statement)

References 9 publications

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“…The gate voltage applied to the in-between Fe is simulated by a rigid shift of the on-site energies of the Hamiltonian describing the isolated in-between Fe slab. We note that Lee et al 23 have been able to fabricate double junctions in which the in-between metallic slab could be gate-biased, so that the DBMTJs that we study here are, in principle, experimentally possible.…”

Section: Systems Under Study and Calculation Methodsmentioning

confidence: 99%

Gate control of the tunneling magnetoresistance in double-barrier junctions

Peralta-Ramos,

Llois

2008

Preprint

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We calculate the conductances and the tunneling magnetoresistance (TMR) of double magnetic tunnel junctions, taking as a model example junctions composed of Fe/ZnSe/Fe/ZnSe/Fe (001). The calculations are done as a function of the gate voltage applied to the in-between Fe layer slab. We find that the application of a gate voltage to the in-between Fe slab strongly affects the junctions' TMR due to the tuning or untuning of conductance resonances mediated by quantum well states.The gate voltage allows a significant enhancement of the TMR, in a more controllable way than by changing the thickness of the in-between Fe slab. This effect may be useful in the design of future spintronic devices based on the TMR effect, requiring large and controllable TMR values.

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Section: Systems Under Study and Calculation Methodsmentioning

confidence: 99%

Gate control of the tunneling magnetoresistance in double-barrier junctions

Peralta-Ramos,

Llois

2008

Preprint

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Tunnel transport through multiple junctions

Peralta-Ramos

Llois

2006

Physica B: Condensed Matter

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We calculate the conductance through double junctions of the type M(inf.)-Sn-Mm-Sn-M(inf.) and triple junctions of the type M(inf.)-Sn-Mm-Sn-Mm-Sn-M(inf.), where M(inf.) are semi-infinite metallic electrodes, Sn are 'n' layers of semiconductor and Mm are 'm' layers of metal (the same as the electrodes), and compare the results with the conductance through simple junctions of the type M(inf.)-Sn-M(inf.). The junctions are bi-dimensional and their parts (electrodes and 'active region') are periodic in the direction perpendicular to the transport direction. To calculate the conductance we use the Green's Functions Landauer-Büttiker formalism. The electronic structure of the junction is modeled by a tight binding Hamiltonian.For a simple junction we find that the conductance decays exponentially with semiconductor thickness. For double and triple junctions, the conductance oscillates with the metal inbetween thickness, and presents peaks for which the conductance is enhanced by 1-4 orders of magnitude. We find that when there is a conductance peak, the conductance is higher to that corresponding to a simple junction. The maximum ratio between the conductance of a double junction and the conductance of a simple junction is 146 %, while for a triple junction it is 323 %. These oscillations in the conductance are explained in terms of the energy spectrum of the junction's active region.

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