Large magnetoresistance effect in thin bismuth wires

Condrea, E.; Grozav, A. D.; Leporda, N. I.; Muntyanu, F. M.

doi:10.1016/s0921-4526(00)00670-0

Cited by 3 publications

(5 citation statements)

References 13 publications

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“…Note that an increase in the contribution of electrons to TEP up to a sign change from positive to negative was observed in our earlier investigations on Bi wires under the uniaxial strain [26]. In the continuation of the investigations of the strained Bi NWs the dependences of resistance and thermopower on strain (0 ≤ ε ≤ 3%) and temperature (4.2 K ≤ T ≤ 300 K) were measured.…”

Section: Bi Wires Under Strainmentioning

confidence: 52%

Strain induced peculiarities in transport properties of Bi nanowires

Condrea¹,

Gilewski²,

Nicorici³

2013

J. Phys.: Condens. Matter

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We report results on the effect of strain on the thermopower and electrical resistance of glass-coated individual Bi nanowires. Here, we show that there is a critical diameter of wires below which the contribution of holes to the charge transport in pure Bi nanowires is more significant than that of electrons. The properties of Bi nanowires are examined in the light of a strain induced electronic topological transition. At low temperatures, the thermopower dependences on strain exhibit a non-monotonic behavior inherent in thinner wires, where the thermopower is dominated by the diffusion transport mechanism of holes. The hole-dominated transport can be transformed into electron-dominated transport through a smooth manipulation with the phonon spectrum and Fermi surface by applying a uniaxial strain. A fairly high value of the thermoelectric power factor (S(2)/ρ = 89 μW cm(-1) K(-2)) was found in the temperature range of 80-300 K, where the dominant mechanism contributing to the thermopower is diffusive thermoelectric generation with electrons as the majority carrier.

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Section: Bi Wires Under Strainmentioning

confidence: 52%

Strain induced peculiarities in transport properties of Bi nanowires

Condrea¹,

Gilewski²,

Nicorici³

2013

J. Phys.: Condens. Matter

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“…The change of the TEP sign was explained as being caused by a phonon drag mechanism in a wire with the sizeinduced quantized energy spectrum. The experimental results of [7] are similar and show that the nanowires with d = 500, 300 and 100 nm have increasing thermopower values of about +10, +30 and +40 µV K −1 at T ≈ 79 K. By changing the band structure upon application of tensile strains, the TEP of these wires changes sign to negative and reaches values from −45 to about −85 µV K −1 . On the other hand, the TEP of 65 and 40 nm Bi/Al 2 O 3 nanowire arrays is negative from room to liquid-helium temperatures with values between −20 and −25 µV K −1 at T ≈ 80 K [8].…”

Section: Introductionmentioning

confidence: 55%

“…Long Pyrex-coated Bi wires were fabricated using the same improved variant of the Taylor method as in [4][5][6][7]. This method, which is presently known as the glass-coated melt spinning method [12], consists in the melting of a metal in a glass tube by rf induction heating and drawing a glass capillary in which the molten metal is entrapped.…”

Section: Resultsmentioning

confidence: 99%

“…This feature is well-resolved even at T ≈ 25 K, where the SdH oscillations disappear. Since the Fermi-surface parameters for bulk Bi are known with a high degree of accuracy, we can use formula (7) for an estimation of the effective wire diameter. For the holes in our experimental configuration, p F ≈ 4.5 × 10 −21 g cm s −1 [18], and, consequently, d ≈ 150 nm, in fairly good agreement with the 200 ± 50 nm derived from R(0, 300 K) = (4L/πd 2 )ρ(0, 300 K), where ρ(0, 300 K) = 120-200 µ cm [2].…”

Section: Discussionmentioning

confidence: 99%

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Positive thermopower of single bismuth nanowires

Grozav¹,

Condrea²

2004

J. Phys.: Condens. Matter

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The thermoelectric power and electrical resistance of pure bismuth nanowires have been measured in longitudinal magnetic fields up to B = 20 T at temperatures between 4.2 and 26 K. At B = 0, the 200 nm samples exhibit large values of thermopower (about +110 μV K−1 at 25 K), which are dominated by diffusion with no phonon drag being evident. Both the magnetoresistance and magnetothermopower show well-pronounced features generated by the diffuse surface scattering of hole carriers. In particular, the magnetothermopower offers the possibility of identifying the characteristic magnetic field, where the diameter of the hole Larmor orbit equals the wire diameter, as an extremum, in distinction from the magnetoresistance data, where the corresponding feature manifests as an inflection point. The frequencies of Shubnikov–de Haas oscillations were found to be consistent with the Fermi-surface parameters of bulk Bi. The contribution of holes to the charge transport in pure Bi nanowires is more significant than generally thought.

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Section: Bi Wires Under Strainmentioning

confidence: 83%

Thermopower Peculiarities of Uniaxial-Strained Bismuth Nanowires

et al. 2014

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We present the results of the investigations of the thermopower and electrical resistance of Pyrex-coated Bi nanowires. Here we show that there is a critical thickness of wire below which structural defects can strongly influence the charge transport in Bi nanowires, fabricated by the melt spinning method. At low temperature the contribution of holes to the thermopower dominates the electron contribution. Thermoelectric parameters of Bi nanowires may be controlled by applying a thermal treatment and/or a uniaxial pressure. A fairly high value of thermoelectric power factor was found under strain in the temperature range of 80-300 K, where the dominant mechanism contributing to the thermopower is diffusive thermoelectric generation with electrons as the majority carrier.

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Large magnetoresistance effect in thin bismuth wires

Cited by 3 publications

References 13 publications

Strain induced peculiarities in transport properties of Bi nanowires

Strain induced peculiarities in transport properties of Bi nanowires

Positive thermopower of single bismuth nanowires

Thermopower Peculiarities of Uniaxial-Strained Bismuth Nanowires

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