We study the electron spin relaxation in both symmetric and asymmetric GaAs/ AlGaAs quantum wells (QWs) grown on (110) substrates in an external magnetic field B applied along the QW normal. The spin polarization is induced by circularly polarized light and is detected using the time-resolved Kerr rotation technique. In the asymmetric structure, where a δ-doped layer on one side of the QW produces the Rashba contribution to the conduction-band spin-orbit splitting, the lifetime of electron spins aligned along the growth axis exhibits an anomalous dependence on B in the range 0 < B < 0.5 T; this results from the interplay between the Dresselhaus and Rashba effective fields which are perpendicular to each other. For larger magnetic fields, the spin lifetime increases, which is a consequence of the cyclotron motion of the electrons and is also observed in (001)-grown quantum wells. The experimental results are in agreement with the calculation of the spin lifetimes in (110)-grown asymmetric quantum wells described by the point group C s , where the growth direction is not the principal axis of the spin-relaxation-rate tensor. Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. New J. Phys. 16 (2014) 045008 G Wang et al c z is the cyclotron frequency, m* is the effective mass, Γ αβ ( ) B z is the tensor of spin dephasing rates slowed-down by cyclotron motion, New J. Phys. 16 (2014) 045008 G Wang et al 7 New J. Phys. 16 (2014) 045008 G Wang et al 9