2018
DOI: 10.1021/acs.jpcc.7b11583
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Large Magnetoresistance in Fe3O4/4,4′-Bipyridine/Fe3O4 Organic Magnetic Tunnel Junctions

Abstract: Organic magnetic tunnel junctions (OMTJs) are promising systems thanks to their chemically tunable electronic property, long spin lifetime, and easy functionalizations. Here, the spin-dependent electronic transport properties in Fe3O4/4,4′-bipyridine/Fe3O4 OMTJs are investigated by first-principles quantum transport calculations. Since the transport properties of junctions are sensitive to device details, two types of terminations of Fe3O4 electrodes are considered. The device with tetrahedral Fe termination s… Show more

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Cited by 25 publications
(11 citation statements)
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“…The MTJ consists of an insulator sandwiched between two magnetic electrodes. Previous investigations show that many exceptional spin-related phenomena such as spin filtering, tunnel magnetoresistance (TMR), and the Kondo effect, have been discovered in these junctions. TMR is an important physical phenomenon that has a tremendous economic impact on magnetic information storage, including magnetoresistive random access memory (MRAM), microwave generators, radiofrequency sensors, and neuromorphic computing networks. Since the first detection of TMR in the FM/Al 2 O 3 /FM junction at room temperature, , a great deal of efforts has been made to this issue.…”
Section: Introductionmentioning
confidence: 99%
“…The MTJ consists of an insulator sandwiched between two magnetic electrodes. Previous investigations show that many exceptional spin-related phenomena such as spin filtering, tunnel magnetoresistance (TMR), and the Kondo effect, have been discovered in these junctions. TMR is an important physical phenomenon that has a tremendous economic impact on magnetic information storage, including magnetoresistive random access memory (MRAM), microwave generators, radiofrequency sensors, and neuromorphic computing networks. Since the first detection of TMR in the FM/Al 2 O 3 /FM junction at room temperature, , a great deal of efforts has been made to this issue.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, there has been a surge of interest in OSV-based multifunctional spintronic devices, which shows a great potential in integrated information storage and processing [13][14][15][16][17][18][19]. In particular, the spinterface between the ferromagnetic (FM) electrode and organic semiconductor plays a key role in spin-dependent transport properties [20][21][22][23][24], thus the related interface engineering deserves much attention. Meanwhile, the selection of FM electrode has been a common approach to optimize the band alignment and further improve the device performance.…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3][4][5][6] In general, the spin filter consists of two ferromagnetic layers and a sandwiched insulator layer or organic molecules, similar to magnetic tunneling junctions (MTJs). [7][8][9][10][11] The spin direction is fixed for one ferromagnetic layer and tuned for another ferromagnetic layer by the external magnetic field and other factors. The electrical current changes from minimum to maximum when the magnetic direction of the tunable ferromagnetic layer is altered from being parallel to anti-parallel with respect to fixed layer and vice versa, corresponding to the switch-on (logic one) and switch-off (logic zero) states of the spin filter.…”
Section: Introductionmentioning
confidence: 99%