Large magnetoresistance in (In, Zn)As/InAs p-n junction

Abstract

We study the magnetotransport property of a (In, Zn)As/InAs p-n junction and observe a breakdown behavior in the reverse bias region. This breakdown behavior can be attributed to two different electronic processes: the trap-assisted tunneling at moderate reverse voltage and the impact ionization at high reverse voltage. The former gives rise to a positive magnetoresistance, and a maximum of 226% is obtained at room temperature. The latter induces a very large positive magnetoresistance and its maximum of 428% is observed at a reverse voltage of 1.32 V.

Impact ionization and large room-temperature magnetoresistance in micron-sized high-mobility InAs channels

“…The measured MR values are comparable to those reported in the literature for MR devices based on magnetic materials [16][17][18] and, more recently, for nonmagnetic semiconductors; e.g., Si [15] and InSb [3]. Large values of the MR (ß10 3 % at T = 300 K and B ß 1 T) were also reported in hybrid metal semiconductor devices [21,22].…”

“…These findings are of general interest as they apply to other high-mobility, narrow band gap semiconductors. Also, they are of technological relevance, as magnetic-field dependent impact ionization can provide a highly sensitive mechanism for controlling the electrical resistance without the need to exploit spin-related transport phenomena, as is commonly done in magnetic materials [16][17][18].…”

Transport and photoresponse properties in Pr 0.5 Ca 0.5 CoO 3 /Nb-SrTiO 3 heterostructure

“…So it is important to study the physical mechanisms of correlated electron systems through their structures. For example, the properties of p-n junctions exhibit significant magnetic-field effects [12,13]. We have fabricated the LaSrCoO/Si heterostructure by depositing a LaSrCoO film on an n-type Si substrate and found photovoltaic properties and crossover of magnetoresistance from positive to negative [14,15].…”