Large photoluminescence redshift of ZnTe nanostructures: The effect of twin structures

Evolution of Nitrogen-Related Defects in Graphitic Carbon Nitride Nanosheets Probed by Positron Annihilation and Photoluminescence Spectroscopy

“…Moreover, laser-induced local heating is known to cause a spectral red shift and quenching in emission intensity by enhancing electron−phonon interaction and increasing nonradiative recombination centers. 62,63 No such spectral features have been observed in the PL spectra. Therefore, laser heating is not the principle reason for the changes observed in the emission profile.…”

“…However, in C 3 N 4 , having a conjugated two-dimensional network, the heat energy might easily transfer throughout the system and therefore the localized heating effect as such may not be prominent. Moreover, laser-induced local heating is known to cause a spectral red shift and quenching in emission intensity by enhancing electron–phonon interaction and increasing nonradiative recombination centers. , No such spectral features have been observed in the PL spectra. Therefore, laser heating is not the principle reason for the changes observed in the emission profile.…”

One-step synthesis of nail-like Mn-doped CdS/CdBr2 hetero-nanostructures for potential lasing application

“…The band-edge PL emission of nanostructure shows a redshift trend with increasing excitation power (figure 4(a)), which could be obviously seen in the plot of the PL peak position versus laser excitation power (figure 4(b)). With the increase of the excitation power, a large number of photoinduced carriers and intrinsic bound charges within S-Cd-Br pairs are responsible for the bandgap reductions of composite nail, at the same time, accompanied with large electron-phonon coupling, strong electron screening and scattering around heterostructure [46,47]. Therefore, the emission bands from such bound excitons have a significant redshift with powers, but the near IR emission band at 720 nm of the nanowire as a function of the excitation power did not change.…”

Twinning effect on photoluminescence spectra of ZnSe nanowires

“…This is because twinning could affect the migration of atoms and electrons in polycrystalline solids, thus influencing properties of the materials, [9][10][11] such as interrupting dislocation glide, 12 and strengthening the material 13 without loss in electronic conductance. 12,14,15 Moreover, the existence of twinning in nanowires, especially the transverse twinning (the twin plane of it is vertical to the axial length of nanowire), could influence the position of the emission peak of photoluminescence (PL) of nanowires significantly, [16][17][18] which demonstrates that twinning could affect the bandgap of nano-material, implying that bandgap engineering in a single material along the axial length of nanowires might be realized because of the rapid developments of twinning nanowires. 19 The twinning effect on structure, optoelectronic properties have been observed and investigated extensively in III-V semiconductor nanowires, 6,17,20,21 but have not, to our knowledge, been reported in II-VI semiconductor nanowires.…”