Large Polarization of Hf₀.₅Zr₀.₅Oₓ Ferroelectric Film on InGaAs With Electric-Field Cycling and Annealing Temperature Engineering

Suh, Yoon-Je; Jeong, Jaeyong; Kim, Bong Ho; Kuk, Song-Hyeon; Kim, Seong Kwang; Kim, Joon Pyo; Kim, Sanghyeon

doi:10.1109/led.2024.3369400

IEEE Electron Device Lett.

2024

DOI: 10.1109/led.2024.3369400

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Large Polarization of Hf₀.₅Zr₀.₅Oₓ Ferroelectric Film on InGaAs With Electric-Field Cycling and Annealing Temperature Engineering

Yoon-Je Suh,

Jaeyong Jeong,

Bong Ho Kim

et al.

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Cited by 2 publications

References 27 publications

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Oxygen reservoir effect of Tungsten trioxide electrode on endurance performance of ferroelectric capacitors for FeRAM applications

Choi,

Shin,

Min

et al. 2024

Sci Rep

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Oxygen reservoir effect of Tungsten trioxide electrode on endurance performance of ferroelectric capacitors for FeRAM applications

Choi,

Shin,

Min

et al. 2024

Sci Rep

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HfAlOx-based ferroelectric memristor for nociceptor and synapse functions

Ju,

Park,

Noh

et al. 2024

The Journal of Chemical Physics

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Efficient data processing is heavily reliant on prioritizing specific stimuli and categorizing incoming information. Within human biological systems, dorsal root ganglions (particularly nociceptors situated in the skin) perform a pivotal role in detecting external stimuli. These neurons send warnings to our brain, priming it to anticipate potential harm and prevent injury. In this study, we explore the potential of using a ferroelectric memristor device structured as a metal–ferroelectric–insulator–semiconductor as an artificial nociceptor. The aim of this device is to electrically receive external damage and interpret signals of danger. The TiN/HfAlOx (HAO)/HfSiOx (HSO)/n+ Si configuration of this device replicates the key functions of a biological nociceptor. The emulation includes crucial aspects, such as threshold reactivity, relaxation, no adaptation, and sensitization phenomena known as “allodynia” and “hyperalgesia.” Moreover, we propose establishing a connection between nociceptors and synapses by training the Hebbian learning rule. This involves exposing the device to injurious stimuli and using this experience to enhance its responsiveness, replicating synaptic plasticity.

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Large Polarization of Hf₀.₅Zr₀.₅Oₓ Ferroelectric Film on InGaAs With Electric-Field Cycling and Annealing Temperature Engineering

Cited by 2 publications

References 27 publications

Oxygen reservoir effect of Tungsten trioxide electrode on endurance performance of ferroelectric capacitors for FeRAM applications

Oxygen reservoir effect of Tungsten trioxide electrode on endurance performance of ferroelectric capacitors for FeRAM applications

HfAlOx-based ferroelectric memristor for nociceptor and synapse functions

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