Large Qxf product for HBAR using Smart Cut &#x2122; transfer of LiNbO<inf>3</inf> thin layers onto LiNbO<inf>3</inf> substrate

Abstract

In this paper, we propose a novel approach for HBAR devices using the Smart Cut TM technology to obtain thin homogeneous X-cut single crystal films of LiNb03• Sub-micron layers were successfully transferred onto LiNb03 handle wafers.RF characterizations were performed around 1.95 GHz and quality factors in excess of 40 000 are extracted, proving the applicability of layer transfer by Smart Cut TM to acoustic devices. An excellent matching between simulations and experimental data as well as TCF measurements are presented in this paper.

Design and Fabrication of S₀ Lamb-Wave Thin-Film Lithium Niobate Micromechanical Resonators

“…The quality factor of the device with only 3 finger electrodes is 3300 at 498.3MHz, yielding a f × Q of 1.6 × 10 12 . This is only one order of magnitude less than the phonon-phonon interaction limited f × Q of bulk LN [22]. Moreover, the k 2 e f f × Q of the device with 5 fingers is 194 where the k 2 ef f and Q are 6.8% and 2850.…”

Epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics

“…Comparison with other HBAR and BAW resonators. Apart from the GaN/NbN/ SiC epi-HBAR data in this work, our study includes data reported in the literature from solid BAW overtone resonators fabricated from single-crystal bulk quartz, LiNbO 3 , and Si 6,7,17,24,25,42,[60][61][62] , as well as sputter-deposited HBARs on diamond 13,16,20,26,30 , fused silica 14 , quartz 14 , sapphire 5,14,15,21,27,28,63 , silicon 14,15,26,29 , and SiC 16,18,19,26 substrates. The sputter-deposited HBARs use polycrystalline piezoelectric AlN and ZnO thin films deposited on Al, Pt, Mo, and p + doped Si BE.…”

Acoustic filters based on thin single crystal LiNbO<inf>3</inf> films: Status and prospects

“…The overall process is summarized in Fig. 3 and was applied to the transfer of Z-cut LiNbO 3 onto a Z-cut LiNbO 3 wafer [22], of Y-cut LiNbO 3 onto a (100) silicon wafer [7], and more recently to transfer X-cut LiNbO 3 onto X-cut LiNbO 3 [23]. This demonstrates the versatility of the film transfer techniques in providing oriented films, where deposition techniques force the deposition of c−axis-oriented films.…”

“…To ensure that LiNbO 3 thin films with parallel faces are obtained, Pijolat et al replaced the metal bonding/grinding/polishing approach by a direct oxyde-oxyde bonding and a transfer of the piezoelectric film using the Smart Cut T M process described in section II-B [23]. In this work, the lithium niobate films and substrates were taken as Xcut.…”