2021
DOI: 10.1039/d1cp02039k
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Large Rashba splitting, carrier mobility, and valley polarization in a 1T-SnS2/MoTe2 heterostructure

Abstract: The structural and electronic properties of the 1T-SnS2/MoTe2 heterostructure were investigated based on density functional theory and Berry curvature calculations. Considering the strong spin–orbit coupling and space inversion asymmetry, large...

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Cited by 8 publications
(1 citation statement)
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“…Recently, single-layer group-IV–VI chalcogenides have risen as a new series of 2D materials with advantages of nontoxicity, superior stability, and sufficient resource. In 2019, Xu et al . prepared 2D atomic-layers of SnS 2 by chemical vapor deposition (CVD) and found the SnS 2 nanosheet-based field-effect transistors (FETs) possessing a high on/off ratio of 10. , Xia et al .…”
Section: Introductionmentioning
confidence: 99%
“…Recently, single-layer group-IV–VI chalcogenides have risen as a new series of 2D materials with advantages of nontoxicity, superior stability, and sufficient resource. In 2019, Xu et al . prepared 2D atomic-layers of SnS 2 by chemical vapor deposition (CVD) and found the SnS 2 nanosheet-based field-effect transistors (FETs) possessing a high on/off ratio of 10. , Xia et al .…”
Section: Introductionmentioning
confidence: 99%