Large-scale and facile fabrication of <font>PbSe</font> nanostructures by selenization of a <font>Pb</font> sheet

Hoomi, Sara; Yousefi, Ramin; Jamali‐Sheini, Farid; Saáedi, Abdolhossein; Cheraghizade, Mohsen; Basirun, Wan Jefrey; Huang, Nay Ming

doi:10.1142/s1793604715500630

Cited by 18 publications

(9 citation statements)

References 29 publications

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“…Both the optical and structural properties thus obtained are comparable to those of the PbSe cubes and dendrites grown by the solvothermal method. This is in contrast to the previous results on PbSe film produced by the selenization of Pb sheets [20], which exhibited an absorption edge at ∼0.62 eV at 300 K due to the smaller grain size.…”

Section: Discussioncontrasting

confidence: 99%

“…All the PL peak energies agree with the bandgap energy of bulk PbSe, implying that the photo-carriers, which contribute to the PL emission, are from the nanocrystals with sufficiently large size and with little quantum confinement, rather than from the localized states such as surface states. It is worth mentioning that PL emission was not observed from the mechanochemically synthesized PbS without any thermal treatment, and no PL spectrum was reported from the PbSe film fabricated by the selenization of Pb sheets [20], possibly due to their lower optical quality which is associated with the grain boundaries or impurities. The PL line-shapes of the selenized PbSe layers are slightly asymmetric with high-energy tails and the PL linewidths are larger than those of the PbSe cubes and dendrites, due to the PL contribution from the relatively small particles.…”

Section: Resultsmentioning

confidence: 99%

“…A PbSe film composed of nanoparticles was also previously obtained by the selenization of a Pb sheet under a two-zone heating process [20]. The absorption edge of the PbSe film was ∼0.62 eV at 300 K, substantially higher than the bandgap of bulk PbSe.…”

Section: Introductionmentioning

confidence: 99%

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Photoluminescence properties of lead selenide produced by selenization and a solvothermal method

et al. 2016

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We studied temperature-dependent photoluminescence (PL) spectra of lead selenide (PbSe) dendrites and cubes grown by a solvothermal method. Their PL peaks were located at ∼8 μm at 10 K with a full width at half maximum (FWHM) of 10 meV. Using the temperature-dependent FWHM values, we obtained carrier-phonon coupling coefficients for PbSe. We also demonstrated mechanochemical synthesis of polycrystalline PbS nanoparticles and their successful conversion into a PbSe layer composed of nanocrystals by a selenization process with thermal treatment. The nanocrystals were found to be formed by the orientation alignment of small grains in the process. The PL peak energies of the PbSe layers as well as the PbSe dendrites and the cubes agreed well with their absorption edges in the transmission spectra, indicating that the photoluminescence originates from the band-edge emission. The band-edge emissions hold promise for the development of potential mid-infrared light sources using PbSe fabricated by these methods.

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Section: Discussioncontrasting

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Photoluminescence properties of lead selenide produced by selenization and a solvothermal method

et al. 2016

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“…Figure 3(b) shows the peaks of Ag, Ag 3d5/2 and Ag 3d3/2 at 366.1 and 372.9 eV due to the presence of Ag + state ionic silver. As shown in figure 3(c), the XPS spectrum of Pb observed strong peaks at 424.8 eV and 412.9 eV in 4d3/2 and 4d5/2, respectively, which is consistent with the valence state of Pb 2+ in the PbSe system [25,26].…”

Section: Microstructural Characterizationsupporting

confidence: 67%

Ag, Pb co-doped SnSe high performance thermoelectric materials

Li,

Duan

et al. 2024

J. Phys. D: Appl. Phys.

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SnSe, as a novel thermoelectric material, has ultrahigh thermoelectric properties in its single crystals, while the thermoelectric properties of polycrystals need to be further improved. Introducing atomic disorder to increase the lattice anharmonicity of the material is a typical strategy to reduce the lattice thermal conductivity and enhance the thermoelectric properties. Ag and Pb co-doping increased the effective carrier mass of the samples, and the resultant strong phonon scattering leads to a drastic decrease of the lattice thermal conductivity over the whole temperature range, and at the same time, optimizes the energy-band structure of SnSe, which finally significantly increases the Seebeck coefficient of SnSe. However, the electrical properties of SnSe deteriorate due to Pb elemental doping, so we introduce Ag atoms with higher intrinsic conductivity to increase its conductivity. At 800 K, the electrical conductivity of the Sn0.82Ag0.08Pb0.1Se sample is about twice as much as that of the undoped SnSe, and the thermal conductivity is 0.28 W/mK. The ZT value of Sn0.82Ag0.08Pb0.1Se sample peaked at ~1.33 at 800 K compared to only ~0.48 for undoped SnSe. The ZTave value of Sn0.82Ag0.08Pb0.1Se sample in the temperature range of 300-500 K was ~0.36 compared to only ~0.083 for undoped SnSe samples.

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“…In fact, the nanowires, which are grown in the higher temperature zone, have higher tellurium content. Usually, anion concentration is the most important factor to obtain different morphology in metal-chalcogenide nanostructures [14]. Therefore, according to temperature role as a factor to control tellurium concentration in the set-up, obtaining different morphology could be due to different tellurium concentration.…”

Section: -Experimentalmentioning

confidence: 99%

Growth and characterization of ZnTe nanowires grown in a large scale by a CVD method

2016

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ZnTe nanowires were grown in a big scale by tellurization of zinc sheets in a chemical vapor deposition (CVD) set-up. The zinc sheets were placed in three temperature zones in a tube furnace. Scanning electron microscope (SEM) images showed that, the ZnTe nanowires were grown with bigger diameter in the higher temperature. The phase and composition of the product were identified by X-ray diffraction (XRD) pattern and Xray photoelectron spectra (XPS). The XPS results showed that, the Te concentration was higher for the sample that was placed in the higher temperature. In addition, these nanowires produced a strong photoluminescence (PL) emission peak in the green region and a weak peak in the red region of the electromagnetic spectrum. Furthermore, a comparison study between the XPS and PL was carried out to understand origin of the defect emission of ZnTe nanowires.Recently research about synthesis and application of semiconducting metal chalcogenide nanocrystals is one of the hot topics [1]. Among metal chalcogenides, zinc telluride (ZnTe) is a semiconductor with a direct band gap of 2.26 eV at room temperature and a Bohr exciton radius of 6.2 nm, which is the best semiconductor for the green LED and photovoltaic applications [2][3][4][5]. Therefore, present a simple rout to grow ZnTe nanostructures such ZnTe nanowires could be led to develop optoelectronics devices in the future. Several methods such as molecular beam electrochemical [9], and metal-organic chemical vapor deposition (MOCVD) [10], which are usually complex, expensive, and time consuming, have been used to grow ZnTe nanostructures. On the other hand, the thermal evaporation method is the best method to grow ZnTe nanowires with high quality [11][12][13]. However, using the substrate as cation source can be changed this method to a cost effective method and growing the ZnTe nanowires in a big scale.2 Based on these reasons, we report and discuss the characterization of the ZnTe nanowires in a big scale prepared by a simple tellurization of a zinc sheet in a CVD set-up for the first time. 2-ExperimentalThe ZnTe nanowires were grown using the following procedure. Firstly, three high purity zinc sheets (99 %), with dimensions of 2×2 cm and a thickness of 1 mm were used as substrates. The sheets were cleaned by an electroEtching method. Then the sheets were put into a horizontal tube furnace (CVD set-up) at 345, 375, and 405 °C. Stoichiometric tellurium powder (Sigma-Alderich, tellurium (Te) (99.99%)) was used as the source material to create the tellurium ambiance in the tube furnace, in an alumina boat at 450 ºC. A high purity Ar(99%)/H 2 (10%) gas was fed into the furnace as carrier gas at about 120 sccm at one end, while the other end was connected to a rotary pump. The growth process was allowed to proceed for 1 h. A vacuum of 50 Torr was maintained inside the tube furnace.The morphology, crystal structure, and elemental contents of the products were investigated using a scanning electron microscope (SEM; Hitachi S4160), an X-ray diffractometer (XR...

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Large-scale and facile fabrication of PbSe nanostructures by selenization of a Pb sheet

Cited by 18 publications

References 29 publications

Photoluminescence properties of lead selenide produced by selenization and a solvothermal method

Photoluminescence properties of lead selenide produced by selenization and a solvothermal method

Ag, Pb co-doped SnSe high performance thermoelectric materials

Growth and characterization of ZnTe nanowires grown in a large scale by a CVD method

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