Large scale and low resistance ITO films formed at high deposition rates

Effect of precursor concentration on the properties of ITO thin films

“…spray pyrolysis [4][5][6][7][8][9][10][11][12][13][14][15][16], sol-gel process [17], R.F. sputtering [18][19], evaporation [20], magnetron sputtering [21], electron beam evaporation [22][23], pulsed laser deposition [24], etc.…”

“…The concentration and mobility can be controlled by monitoring substrate temperature and amount of tin doping [10][11][12]. Apart from the different preparative parameters like thickness [13], quantity of the spraying solution [7], starting material [14], dopant, nozzle-substrate distance [15] and air flow rate [15], precursor concentration [16] also plays an important role for obtaining the device quality properties of the ITO thin films.…”

Preparation and characterization of indium tin oxide thin films for their application as gas sensors

“…This is more clearly evident from the changes in peak heights of (222) and (400) in the figure. Similar change in the plane texturing was observed earlier upon changes in the increase in the atomic ratio Sn/In in the films deposited by chemical vapour deposition [34] and with the increase in the substrate temperature for films deposited at very high deposition rate [35]. The promotion of (400) plane texturing has also been associated with improvement in crystallinity in these cases.…”

Sol-gel-derived hybrid conductive films for electromagnetic interference (EMI) shielding

“…The EMI shielding performance is directly related to the sheet resistance of the material, and a low-sheet resistance of at least 5 Ω/sq is required for practical use [22,23] .…”