Large-scale fabrication and Mo vacancy-induced robust room-temperature ferromagnetism of MoSe₂ thin films

Abstract

Molybdenum selenide (MoSe2) has recently attracted particular attention for its room-temperature ferromagnetism (RTFM) and related spintronic applications. However, not only the FM mechanism of MoSe2 remains controversial, but also the...

Synthesis of Gadolinium-Doped Molybdenum Diselenide Nanospheres for Ultrasensitive Electrochemical Determination of Essential Amino Acid in Human Serum and Milk Samples

“…This result is wellmatched with the standard crystal phase of MoSe 2 (JCPDS No. 33 Besides, the diffraction peak at 45.1°and 61.5°formed due to the evolution Gd 2 O 3 after doping of Gd in MoSe 2 has been indexed to the diffraction plane (440), ( 611) and (622). 33,34 The functional groups of Gd@MoSe 2 were analyzed by FTIR spectroscopy Fig.…”

Scalable Fabrication of High-Performance Self-Powered a-MoSe2 Thin-Film-Based Photodetectors on a-SiO2/Si Substrates

“…The detailed PAD process of a-MoSe 2 thin films has been reported in our recent work. 17 To prepare a-MoSe 2 thin films with different thicknesses, an ultrafiltered 260 mM Mo precursor solution is diluted to 130, 65, and 26 mM and spin-coated onto 4 cm × 4 cm cleaned a-SiO 2 /Si substrates at 3000 rpm for 30 s, respectively. The growth temperature is set at 770 °C.…”

“…Here, based on scalable low-cost synthesis of homogeneous amorphous MoSe 2 ( a -MoSe 2 ) thin films with different thicknesses (6.5–62.5 nm) on SiO 2 /Si substrates using polymer-assisted deposition (PAD), we report convenient fabrication of metal–semiconductor–metal (MSM) structured self-powered a -MoSe 2 thin film PDs with high performance. With an optimized film thickness (9.5 nm), the self-powered PD exhibits excellent performance characteristics, including photocurrent ( I ph ) of 4.60 μA, phototo-dark current ratio (PDCR) of 3067, photoresponsivity ( R λ ) of 0.94 mA/W, detectivity ( D* ) of 4.29 × 10 10 Jone, low noise equivalent power (NEP) of 2.33 × 10 –11 W/Hz 1/2 , and fast photoresponse rise/decay time (61/58 ms) under a 405 nm laser with 5 mW power at zero bias.…”

“…Here, based on scalable low-cost synthesis of homogeneous amorphous MoSe 2 (a-MoSe 2 ) thin films with different thicknesses (6.5−62.5 nm) on SiO 2 /Si substrates using polymer-assisted deposition (PAD), 17 we report convenient fabrication of metal−semiconductor−metal (MSM) structured self-powered a-MoSe 2 thin film PDs with high performance.…”

Recent advances in two-dimensional intrinsic ferromagnetic materials Fe3X(X=Ge and Ga)Te2 and their heterostructures for spintronics

“…2D magnets can provide novel opportunities for the development of spintronics. Very recently, large-scale 2D magnetic materials with above room-temperature ferromagnetism have been reported in Mn-doped GeSe films, 14 vacancy-incorporated MoSe 2 , 15 and strain-mediated MoS 2 16 and ReS 2 17 films, but their practical applications remain a challenge owing to limited controllability, which indicates that the investigation of 2D intrinsic magnets is imminent. The experimental findings of 2D vdW FM Cr 2 Ge 2 Te 6 , 11 CrI 3 18 and AFM FePS 3 19 with atomic layer thickness immediately lifted the curtain and triggered a wave of research on 2D vdW magnets.…”