Large-Scale Fabrication of Submicrometer-Gate-Length MOSFETs With a Trilayer PtSe<sub>2</sub> Channel Grown by Molecular Beam Epitaxy

Xiong, Kuanchen; Hwang, J.C.M.; Hilse, Maria; Li, Lei; Göritz, Alexander; Lisker, Marco; Wietstruck, Matthias; Kaynak, Mehmet; Engel‐Herbert, Roman; Madjar, A.

doi:10.1109/ted.2020.2966434

Cited by 22 publications

(25 citation statements)

References 22 publications

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“…However, so far, only a few large-scale production methods combining van der Waals epitaxy and standard semiconductor processing have been reported. [19][20][21] There is a variety of 2D crystal growth techniques which has been studied for the synthesis of 2D materials over large areas: chemical vapor deposition (CVD), [22] physical vapor deposition (PVD) [23] , pulsed-laser deposition (PLD), [24] and molecular beam epitaxy (MBE). [25] CVD shows excellent growth uniformity for few layers growth, but defect and impurity densities can be high due to the use of gas carriers with extrinsic elements.…”

Section: Introductionmentioning

confidence: 99%

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Wafer‐Scale Fabrication of 2D β‐In₂Se₃ Photodetectors

Claro

Grzonka

Nicoara

et al. 2020

Advanced Optical Materials

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Nevertheless, the research of 2D materials is still in its early stages. The field started with graphene several years ago, [3] but more materials have been added continuously to the list. Among these, transition metal dichalcogenides (TMDC), [4] which have impressive optical properties in the visible range, are currently one of the most studied 2D materials. Devices made of these materials have shown remarkable performance as photodetectors, [5,6] nonvolatile random access memory, [7] or photovoltaics, [8] even when using simple manual exfoliation methods. More recently, 2D indium selenides (In x Se y) have gained attention, [9] due to their bandgap in the visible spectral region, comparable to TMDCs, but also due to several novel properties: InSe exhibits one of the largest mobilities of 2D semiconductor materials, [10] and β-In 2 Se 3 shows good mobility, [11] excellent photoresponsivity, [12] and exotic ferroelectricity [13] (the ordered ferroelectric phase is also called β′-In 2 Se 3 by some authors). [11,13] Transistors with high mobility and on/off ratio have already been realized. [14] Therefore, 2D In 2 Se 3 materials have the potential to address several limitations of the current silicon (Si) and III-V technologies, such as improved mobility and overall performance of transistors for electronics, as well as integrated photodetectors and light emitters in the same material system (same die), all possible on virtually any substrate, including transparent and flexible substrates. [15,16] Yet, the majority of reported devices from 2D materials rely on fabrication methods based on exfoliation and transfer of layers onto other substrates or other 2D materials. While this device fabrication process allows unprecedented flexibility in the combination of materials and therefore has nearly unlimited device design possibilities, [1] it leads typically to individual or few devices and is a slow and tedious process. On the other hand, due to their layered nature, instead of strong covalent bonds (as in Si and compound semiconductors) van der Waals forces exist between the layers. Hence, 2D materials can be grown epitaxially on substrates with completely different lattice constants without creating the strain and the defects commonly found in mismatched heteroepitaxy. This method is called van der Waals (vdW) epitaxy. [17] Nevertheless, the substrate does influence the growth, [18] as it modifies the nucleation of the first layer. Some substrates provide growth with superior quality (amount of defects, 2D materials are considered the future of electronics and photonics, stimulated by their remarkable performance. Among the 2D materials family, β-In 2 Se 3 shows good mobility, excellent photoresponsivity, and exotic ferroelectricity, making it suitable for a wide variety of applications. To date, most reported devices from 2D materials in general, and β-In 2 Se 3 in specific, rely on cumbersome fabrication methods using mechanical exfoliation and transfer of layers onto other substrates. However, for a successful ado...

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Section: Introductionmentioning

confidence: 99%

“…However, so far, only a few large‐scale production methods combining van der Waals epitaxy and standard semiconductor processing have been reported. [ 19–21 ]…”

Section: Introductionmentioning

confidence: 99%

Wafer‐Scale Fabrication of 2D β‐In₂Se₃ Photodetectors

Claro

Grzonka

Nicoara

et al. 2020

Advanced Optical Materials

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Section: Field-effect Transistorsmentioning

confidence: 99%

“…It can be seen from Table 2 that the majority of PtSe 2 -FETs have a back-gate configuration except for two reports on buried-gate FETs using MBE and TAC PtSe 2 films. [27,32] The study based on TAC thin films (Figure 8a) outlined an interesting approach to lowering the contact resistance. [32] The devices started out with relatively thick film of PtSe 2 which was thinned locally in the channel region (i.e., a recessed channel).…”

Section: Field-effect Transistorsmentioning

confidence: 99%

“…In addition, layered PtSe 2 holds great promise for applications in sensors and (opto‐)electronic devices like field‐effect transistors (FETs) and photodetectors (PDs). [ 5,8,21,26–33 ] A thickness‐tunable evolution of the bandgap has been theoretically and experimentally observed in layered PtSe 2 . A direct bandgap of 1.2 eV has been observed in the monolayer limit, this dramatically decreases in few‐layer PtSe 2 and the bulk form is semimetallic.…”

Section: Introductionmentioning

confidence: 99%

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Layered PtSe₂ for Sensing, Photonic, and (Opto‐)Electronic Applications

Wang

McEvoy

et al. 2020

Advanced Materials

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An increasing enthusiasm for research into 2D nanostructures is driven by their exceptional mechanical, chemical, optical, and physical properties that arise from their atomically thin dimension. These properties make 2D nanostructures promising candidates for applications in the next generation of photonic, valleytronic, and (opto-)electronic devices. 2D black phosphorus, for instance, is a novel 2D material with a thickness-tunable bandgap and outstanding properties that have attracted tremendous interest. However, its commercial and industrial applications have been greatly hindered by its poor environmental stability. [1] Layered transition metal dichalcogenides (TMDs), such as MoS 2 , WS 2 , and MoSe 2 , have been experimentally demonstrated to possess thickness-dependent bandgaps and many other promising physical, chemical, and mechanical properties. However, the majority of these TMDs suffer from relatively low charge-carrier mobilities, rather large Schottky barriers when contacted with metals, complicated fabrication processes and a narrow spectral response mainly in the visible region. [2,3] As a result, even though the first report on the experimental isolation of graphene was 16 years ago, [4] and researchers worldwide have spent massive time and effort investigating 2D materials, thus far few have been effectively employed in industrial and commercial applications. Recently, layered PtSe 2 , a Group-10 TMD, has been demonstrated to be one of the most promising 2D materials for adoption by industries due to its unprecedented photonic, physical, and chemical properties along with lowtemperature synthesis methods, high charge-carrier mobilities and long-term air stability. [5-11] One of the important industrial advantages of PtSe 2 is the developed synthesis methods, some of which are compatible with modern silicon technologies. The studied methods to synthesize layered PtSe 2 include molecular-beam epitaxy (MBE), [7,12] chemical vapor deposition (CVD), [8,13] thermally assisted conversion (TAC), [14-20] chemical vapor transport (CVT), [5] plasma-assisted selenization (PAS), [21] microwave assisted synthesis (MAS), [22] mechanical exfoliation (ME), [13,23] the wet chemical (WC) method, [24,20] and so on. Both MBE and CVD are typically carried out at high temperature and can result in high-quality PtSe 2 monolayers. In contrast, wafer-scale and thickness-tunable layered PtSe 2 can be obtained using TAC Since the first experimental discovery of graphene 16 years ago, many other 2D layered nanomaterials have been reported. However, the majority of 2D nanostructures suffer from relatively complicated fabrication processes that have bottlenecked their development and their uptake by industry for practical applications. Here, the recent progress in sensing, photonic, and (opto-)electronic applications of PtSe 2 , a 2D layered material that is likely to be used in industries benefiting from its high air-stability and semiconductor-technology-compatible fabrication methods, is reviewed. The advantages and disad...

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Correlating Nanocrystalline Structure with Electronic Properties in 2D Platinum Diselenide

Lukas

Hartwig

Prechtl

et al. 2021

Adv Funct Materials

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Platinum diselenide (PtSe 2 ) is a 2D material with outstanding electronic and piezoresistive properties. The material can be grown at low temperatures in a scalable manner, which makes it extremely appealing for many potential electronics, photonics, and sensing applications. Here, the nanocrystalline structure of different PtSe 2 thin films grown by thermally assisted conversion (TAC) is investigated and is correlated with their electronic and piezoresistive properties. Scanning transmission electron microscopy for structural analysis, X-ray photoelectron spectroscopy (XPS) for chemical analysis, and Raman spectroscopy for phase identification are used. Electronic devices are fabricated using transferred PtSe 2 films for electrical characterization and piezoresistive gauge factor measurements. The variations of crystallite size and their orientations are found to have a strong correlation with the electronic and piezoresistive properties of the films, especially the sheet resistivity and the effective charge carrier mobility. The findings may pave the way for tuning and optimizing the properties of TAC-grown PtSe 2 toward numerous applications.

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Large-Scale Fabrication of Submicrometer-Gate-Length MOSFETs With a Trilayer PtSe₂ Channel Grown by Molecular Beam Epitaxy

Cited by 22 publications

References 22 publications

Wafer‐Scale Fabrication of 2D β‐In₂Se₃ Photodetectors

Wafer‐Scale Fabrication of 2D β‐In₂Se₃ Photodetectors

Layered PtSe₂ for Sensing, Photonic, and (Opto‐)Electronic Applications

Correlating Nanocrystalline Structure with Electronic Properties in 2D Platinum Diselenide

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Large-Scale Fabrication of Submicrometer-Gate-Length MOSFETs With a Trilayer PtSe2 Channel Grown by Molecular Beam Epitaxy

Cited by 22 publications

References 22 publications

Wafer‐Scale Fabrication of 2D β‐In2Se3 Photodetectors

Wafer‐Scale Fabrication of 2D β‐In2Se3 Photodetectors

Layered PtSe2 for Sensing, Photonic, and (Opto‐)Electronic Applications

Correlating Nanocrystalline Structure with Electronic Properties in 2D Platinum Diselenide

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Product

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Large-Scale Fabrication of Submicrometer-Gate-Length MOSFETs With a Trilayer PtSe₂ Channel Grown by Molecular Beam Epitaxy

Wafer‐Scale Fabrication of 2D β‐In₂Se₃ Photodetectors

Wafer‐Scale Fabrication of 2D β‐In₂Se₃ Photodetectors

Layered PtSe₂ for Sensing, Photonic, and (Opto‐)Electronic Applications