Large-scale generation and characterization of amorphous boron nitride and its mechanical properties in atomistic simulations

Liu, Yin; Pan, Yuncan; Yin, Deqiang; Song, Shufeng; Lin, Liyang; Qi, Xueli; Zhang, Mingxia; Yao, Jianyao

doi:10.1016/j.jnoncrysol.2021.120664

Cited by 9 publications

(5 citation statements)

References 39 publications

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“…[ 8,11,12,31–33,38–40 ] Recent atomistic simulation results also have shown that the Young's modulus increase with increasing the initial density of aBN microstructure is due to 80% sp 2 hybridization and 60% of atoms in hexagonal ring. [ 41 ] Therefore, we ascribe the superior mechanical strength of borazine‐aBN films to the high density that originates from the matching stacking B‐N hexagonal ring stucture.…”

Section: Resultsmentioning

confidence: 99%

Ultralow‐k Amorphous Boron Nitride Based on Hexagonal Ring Stacking Framework for 300 mm Silicon Technology Platform

Lin

Hsu

Huang

et al. 2022

Adv Materials Technologies

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The implementation of ultralow dielectric constant (k value ≈ 2) materials to reduce signal propagation delay in advanced electronic devices represents a critical challenge in next generations of microelectronics technologies. The introduction of well‐stacked and low polarity molecules that do not compromise film density may lead to improvements and desirable material engineering, as conventional porous SiOx derivatives exhibit detrimental degradation of thermo‐mechanical properties when their k values are further scaled down. This work presents a systematic engineering approach for controlling ultralow‐k amorphous boron nitride (aBN) deposition on 300 mm Si platforms. The results indicate that aBN grown from borazine precursor exhibits ultralow dielectric constant ≈2, high density, excellent mechanical strength, and extended thermodynamic stability. Unintentional boron ion doping during plasma dissociation that may induce artificial reductions of k value on n‐type substrates is alleviated by employing a remote microwave plasma process. Moreover, the adoption of low growth rate processes for ultralow‐k aBN deposition is found to be critical to provide for the superior mechanical strength and high density, and is attributed to the formation of hexagonal ring stacking frameworks. These results pave the way and offer engineering solutions for new ultralow‐k material introduction into future semiconductor manufacturing applications.

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Section: Resultsmentioning

confidence: 99%

Ultralow‐k Amorphous Boron Nitride Based on Hexagonal Ring Stacking Framework for 300 mm Silicon Technology Platform

Lin

Hsu

Huang

et al. 2022

Adv Materials Technologies

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“…The results of this study opens a new pathway for improving the properties and stability of these amorphous compounds for their use in applications such as nanoelectronics, spintronics, photovoltaics and/or neuromorphic computing technologies. 106.2 34…”

Section: Discussionmentioning

confidence: 99%

“…Interestingly, the maximum Young´s modulus value obtained for 20 at% C-doping level is only reduced by a of 3 compared to the nanoidentidation measurement of pure crystalline hBN samples 32 and a factor of 2 compared to sheets with high concentration of vacancies 35 , which shows a very strong resilience of mechanical strength for such highly disordered forms of structurally and chemically modified α-BN compounds. Meanwhile, Liu et al 34 obtained the half of the value of Young's modulus. However, density of the sample used are very low suggesting the origin of such difference.…”

Section: Mechanical Propertiesmentioning

confidence: 99%

“…The mechanical properties of aBN:C samples are related to their sp 2 /sp 3 ratios and density. 34 All the moduli consistently show a non-monotonic trend, analogous to thermal stability and density, with a maximum in correspondence of doping between 10 and 20 at%. While the Young's modulus of undoped α-BN:C is 274.85 GPa, it increased to 361.54 GPa with 20 at% C. Similarly, bulk and shear moduli are increased from 223.13 GPa and 106.02 GPa to 296.70 GPa and 139.38 GPa.…”

Section: Mechanical Propertiesmentioning

confidence: 99%

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Revealing the improved stability of amorphous boron-nitride upon carbon doping

et al. 2023

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“…Electronic devices require better thermal management to match the rising demand for BN and epoxy mixed composites. The hexagonal form of BN (h-BN) [ 52 ] is comparable to graphite, the cubic form (c-BN) is like diamond [ 53 ], and the amorphous form (a-BN) is similar to amorphous carbon [ 54 ]. Several BN/epoxy composites have been created.…”

Section: Adhesives With Improved Conductivitymentioning

confidence: 99%

Recent Advances on Thermally Conductive Adhesive in Electronic Packaging: A Review

et al. 2021

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The application of epoxy adhesive is widespread in electronic packaging. Epoxy adhesives can be integrated with various types of nanoparticles for enhancing thermal conductivity. The joints with thermally conductive adhesive (TCA) are preferred for research and advances in thermal management. Many studies have been conducted to increase the thermal conductivity of epoxy-based TCAs by conductive fillers. This paper reviews and summarizes recent advances of these available fillers in TCAs that contribute to electronic packaging. It also covers the challenges of using the filler as a nano-composite. Moreover, the review reveals a broad scope for future research, particularly on thermal management by nanoparticles and improving bonding strength in electronic packaging.

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Large-scale generation and characterization of amorphous boron nitride and its mechanical properties in atomistic simulations

Cited by 9 publications

References 39 publications

Ultralow‐k Amorphous Boron Nitride Based on Hexagonal Ring Stacking Framework for 300 mm Silicon Technology Platform

Ultralow‐k Amorphous Boron Nitride Based on Hexagonal Ring Stacking Framework for 300 mm Silicon Technology Platform

Revealing the improved stability of amorphous boron-nitride upon carbon doping

Recent Advances on Thermally Conductive Adhesive in Electronic Packaging: A Review

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