2022
DOI: 10.1021/acsomega.1c05876
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Large-Scale Monolithic Fabrication of III–V Vertical Nanowires on a Standard Si(100) Microelectronic Substrate

Abstract: Vertical III–V nanowires are of great interest for a large number of applications, but their integration still suffers from manufacturing difficulties of these one-dimensional nanostructures on the standard Si(100) microelectronic platform at a large scale. Here, a top-down approach based on the structure of a thin III–V epitaxial layer on Si was proposed to obtain monolithic GaAs or GaSb nanowires as well as GaAs–Si nanowires with an axial heterostructure. Based on a few complementary metal–oxide–semiconducto… Show more

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Cited by 6 publications
(8 citation statements)
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“…40 The grown GaAs layer is free of antiphase boundaries or point defects. While defects may be present at the nanowire base close to the Si/GaAs interface, 39 the GaAs close to the interface with the metallic layer exhibits high crystal quality, as presented in detail in Supporting Figure S6.…”
Section: ■ Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…40 The grown GaAs layer is free of antiphase boundaries or point defects. While defects may be present at the nanowire base close to the Si/GaAs interface, 39 the GaAs close to the interface with the metallic layer exhibits high crystal quality, as presented in detail in Supporting Figure S6.…”
Section: ■ Resultsmentioning
confidence: 99%
“…38 Formation of Nanoalloys on Vertical GaAs Nanowires. In order to reproduce the same analysis strategy on nanoscale contacts, vertical GaAs nanowires have been fabricated by a top-down approach 39 in a 420-nm-thick GaAs layer deposited on a silicon wafer by metalorganic vapor phase epitaxy (MOVPE). 40 The grown GaAs layer is free of antiphase boundaries or point defects.…”
Section: ■ Resultsmentioning
confidence: 99%
“…Other masking techniques such as e-beam lithography can be used to ensure a more precise control of the nanopillar diameter. 3 This top-down methodology suits applications where improved light absorption properties are crucial.…”
Section: Limitationsmentioning
confidence: 99%
“…Consequently the oxidation process has to be adjusted to the substrate's doping level. This fabrication process can also be extended to other materials such as III/V semiconductors as demonstrated for epitaxial GaAs or GaSb layers on Si substrates [2]. Following the same lithography step, the transfer etching of vertical GaAs structures is achieved through chlorine-based plasma etching.…”
Section: Vertical Channel Engineeringmentioning
confidence: 99%