Large-Scale Photonic Integrated Circuit Transmitters with Monolithically Integrated Semiconductor Optical Amplifiers

Murthy, S.; Kato, Masaki; Nagarajan, Radhakrishnan; Missey, M.; Dominic, Vince; Lai, V.; Taylor, Brian D.; Pleumeekers, J.L.; Zhang, Jianping; Evans, P.; Ziari, M.; Muthiah, R.; Salvatore, R.A.; Tsai, Huan-Shang; Nilson, Alan; Pavinski, D.; Studenkov, P.; Agashe, S.S.; Dentai, A.G.; Lambert, Damien; Bostak, J.; Stewart, Jason A.; Joyner, C.H.; Rossi, J. A.; Schneider, Richard; Reffle, M.; Kish, Fred; Welch, David

doi:10.1109/ofc.2008.4528684

Cited by 16 publications

(6 citation statements)

References 8 publications

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“…Integrating SOAs onto PICs should serve as a valuable means to compensate for losses incurred during signal transmission through fibers and/or other media, e.g., integrating SOAs into large-scale transmitters to achieve the amplification of transmission data [8]. The benefits of SOA integration promise to find numerous applications within the fields of optical communications and signal processing.…”

Section: Discussionmentioning

confidence: 99%

Semiconductor optical amplifier (SOA) integrated on a silicon photonic chip using photonic wire bonds (PWBs)

Wang,

Lin,

Mitchell

et al. 2024

Integrated Optics: Devices, Materials, and Technologies XXVIII

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In this paper, we demonstrate near-C-band semiconductor optical amplifiers (SOAs) integrated on silicon photonic chips using photonic wire bonds (PWBs). PWBs are three-dimensional, nano-printed, freeform, polymer waveguides which provide efficient coupling between optical components. The SOAs used in this work were 975µm long and 400µm wide, with a 1.54µm wide, 1.9µm thick active region. Measurements on a connectorized SOA are presented, showing a peak on-chip gain of 10.6dB at 1510nm when applying a 150mA bias current to it (here we have not calibrated out the coupling losses at the two SOI-waveguide/PWB interfaces nor have we calibrated out the losses at the two PWB/SOA interfaces, indicating that the gain of the SOA is significantly higher than the measured 10.6dB). The PWBconnectorized SOA has a wavelength-dependent gain which was measured from 1480nm to 1555nm, the peak gain being obtained at 1510nm. In addition, the gain depends on the bias current applied, increasing with higher bias currents but saturating when the bias current exceeds 150mA. The PWB-connectorized SOA is also sensitive to the power of the input signal, the gain was larger for lower input powers (i.e., for powers below about -4.9dBm). Varying the polarization state of the input to our PWB-connectorized SOA changed the measured gain by 5.85dB.

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Section: Discussionmentioning

confidence: 99%

Semiconductor optical amplifier (SOA) integrated on a silicon photonic chip using photonic wire bonds (PWBs)

Wang,

Lin,

Mitchell

et al. 2024

Integrated Optics: Devices, Materials, and Technologies XXVIII

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“…An InP-based solution for fabricating the fixed-wavelength laser array on the transmitting side is described in [21]. The same technology can be used to integrate multiple 40 Gb/s electro-absorption modulators (EAM) on the same chip [22].…”

Section: Optical Devices and Technologymentioning

confidence: 99%

Power and scalability analysis of multi-plane optical interconnection networks

et al. 2012

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The scalability of current electrical interconnection networks will be soon limited by their power consumption and dissipation. To overcome such an issue, multi-plane optical interconnection networks have been proposed. Multi-plane networks are composed of a number of cards, each of them supporting a number of ports, interconnected through a passive optical backplane. Two switching domains are envisioned to be exploited allowing for flexible switching of data packets across all ports and cards. This study considers three different implementations that are representative of the multi-plane optical interconnection networks based on space and wavelength switching. The implementations differ from each other in the switching domain used. The aim of the work is to investigate the power consumption and scalability of the three implementations, based on state-of-the-art 40 Gb/s technology. The physical layer analysis and the power consumption assessment including both electronic and optical components indicate that the implementation can impact on the scalability as well as the power consumption. The arrayed waveguide gratings (AWG)-based implementation is found to suffer from scalability and power consumption issues. On the other hand, an implementation based on active switches shows an energy efficiency similar to the coupler-based implementation, but a four-fold scalability increase

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“…In order to reduce energy consumption, device size and packaging cost, large scale photonic integrated circuits (PICs) have attracted great interest. In the future communication network, PIC will play an important role [1]. Up to now, there are various methods to fabricate a multiwavelength laser array (MLA), such as ebeam lithography [2], the method changing effective refractive index [3], etc.…”

Section: Introductionmentioning

confidence: 99%

Equivalent λ/4 phase shift to improve the single longitudinal mode property of asymmetric sampled Bragg grating semiconductor laser

Zhou

Shi

et al. 2010

2010 IEEE International Topical Meeting on Microwave Photonics

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A special sampled Bragg grating (SBG) configuration, which consists of two sections with same length and different effective refractive index, is proposed. Because an equivalent λ/4 phase shift based on reconstruction equivalent chirp (REC) technology is introduced, the asymmetric structure can effectively suppress the lasing in its 0 th channel, and then its single longitudinal mode (SLM) property is improved. This proposed method can also be used to fabricate high performance multiwavelength laser array (MLA) with high yield.

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Large-Scale Photonic Integrated Circuit Transmitters with Monolithically Integrated Semiconductor Optical Amplifiers

Abstract: We have successfully demonstrated large-scale photonic integrated circuit (LS-PIC) transmitters with monolithically integrated semiconductor optical amplifiers. Data is presented for for 10 channel devices operating at 10 and 40 Gb/sec.

Cited by 16 publications

References 8 publications

Semiconductor optical amplifier (SOA) integrated on a silicon photonic chip using photonic wire bonds (PWBs)

Semiconductor optical amplifier (SOA) integrated on a silicon photonic chip using photonic wire bonds (PWBs)

Power and scalability analysis of multi-plane optical interconnection networks

Equivalent λ/4 phase shift to improve the single longitudinal mode property of asymmetric sampled Bragg grating semiconductor laser

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Large-Scale Photonic Integrated Circuit Transmitters with Monolithically Integrated Semiconductor Optical Amplifiers

Abstract: We have successfully demonstrated large-scale photonic integrated circuit (LS-PIC) transmitters with monolithically integrated semiconductor optical amplifiers. Data is presented for for 10 channel devices operating at 10 and 40 Gb/sec.

Cited by 16 publications

References 8 publications

Semiconductor optical amplifier (SOA) integrated on a silicon photonic chip using photonic wire bonds (PWBs)

Semiconductor optical amplifier (SOA) integrated on a silicon photonic chip using photonic wire bonds (PWBs)

Power and scalability analysis of multi-plane optical interconnection networks

Equivalent &#x03BB;/4 phase shift to improve the single longitudinal mode property of asymmetric sampled Bragg grating semiconductor laser

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Equivalent λ/4 phase shift to improve the single longitudinal mode property of asymmetric sampled Bragg grating semiconductor laser