2003
DOI: 10.1007/s00339-002-1961-z
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Large-scale synthesis of crystalline ?-SiC nanowires

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Cited by 60 publications
(23 citation statements)
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“…However, the high purity raw materials (Si 99.9999%) and Ar atmosphere (99.999%) assured that the reaction without involving SiO (g), which was used as the middle-reactant in most reports by VS and VLS mechanism [23][24][25][26]. In addition, the silicon and the carbon black were separately situated in the bottom of the crucible and over the alumina net, respectively, direct reaction of liquid silicon and solid carbon could not take place.…”
Section: Resultsmentioning
confidence: 98%
“…However, the high purity raw materials (Si 99.9999%) and Ar atmosphere (99.999%) assured that the reaction without involving SiO (g), which was used as the middle-reactant in most reports by VS and VLS mechanism [23][24][25][26]. In addition, the silicon and the carbon black were separately situated in the bottom of the crucible and over the alumina net, respectively, direct reaction of liquid silicon and solid carbon could not take place.…”
Section: Resultsmentioning
confidence: 98%
“…The Raman analysis also identifies the obtained nanowires consists of ␤-SiC and ␣-SiC. For emergence of large red shifts of TO and LO phonon peaks in the nanowires, the abundant structure defects exhibit a significant effect and quantum confinement effect acts like a minor part [10][11][12][13].…”
Section: Resultsmentioning
confidence: 99%
“…In the past decade, many methods to synthesize SiC nanowires have been developed since the first successful synthesis of SiC nanorods in 1995 by a reaction between carbon nanotubes and SiO or SiI 2 [6]. For example, a two-step process involving the generation of SiO vapor and its reaction with carbon nanotubes or other carbon sources [7][8][9], carbothermal reduction of sol-gel derived silica xerogel containing carbon nanoparticles [10], hot filament chemical vapor deposition [11], passing current through tungsten boat to heat up SiC powder containing it [12], reactions between SiCl 4 and CCl 4 using metal Na as the coreductant [13], annealing polycrystalline SiC thin films in H 2 [14], silicon substrates act as reactant [15][16][17], and some other approaches [18][19][20][21].…”
Section: Introductionmentioning
confidence: 99%