Large-scale thallene film with emergent spin-polarized states mediated by tin intercalation for spintronics applications

Mihalyuk, A.N.; Bondarenko, L. V.; Tupchaya, A. Y.; Vekovshinin, Yuriy E.; Utas, T.V.; Грузнев, Д. В.; Chou, Jyh‐Pin; Еремеев, С. В.; Зотов, А. В.; Саранин, А. А.

doi:10.1016/j.mtadv.2023.100372

Cited by 4 publications

(2 citation statements)

References 49 publications

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“…41 Thallene works as a semiconductor with an indirect gap of 420 meV, where the highest occupied band is formed by the Tl P xy orbitals and the lowest unoccupied band is mostly composed of P z orbitals. 42 The structure of thallene is shown in the STM image in Fig. 4.…”

Section: Thallenementioning

confidence: 99%

Beyond the horizons of graphene: xenes for energy applications

Santra,

Ghosh,

Das

et al. 2024

RSC Sustain.

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Section: Thallenementioning

confidence: 99%

Beyond the horizons of graphene: xenes for energy applications

Santra,

Ghosh,

Das

et al. 2024

RSC Sustain.

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“…The discovery, characterization and control of electronic properties in low-dimensional materials reduced down to the atomic-scale limit are of special interest for nanoelectronics due to a number of fascinating effects such as unconventional superconductivity, 1 non-trivial topology, 2 flat bands, 3 the topological Hall effect, 4 strong spin–orbit coupling effects induced by the integration of heavy quasiparticles 5 or interface engineering, 6,7 highly anisotropic spin-polarized states 8–10 and other emergent effects promising for versatile applications in the nanotechnology industry. 11–13 It is noteworthy that spin–orbit coupling (SOC) plays a decisive role in many electronic effects observed in quantum materials.…”

Section: Introductionmentioning

confidence: 99%

Emergence of quasi-1D spin-polarized states in ultrathin Bi films on InAs(111)A for spintronics applications

Mihalyuk,

Bondarenko,

Tupchaya

et al. 2024

Nanoscale

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Large-band-gap non-Dirac quantum spin Hall states and strong Rashba effect in functionalized thallene films

Liu,

Li,

Bao

et al. 2023

Sci Rep

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The quantum spin Hall state materials have recently attracted much attention owing to their potential applications in the design of spintronic devices. Based on density functional theory calculations and crystal field theory, we study electronic structures and topological properties of functionalized thallene films. Two different hydrogenation styles (Tl2H and Tl2H2) are considered, which can drastically vary the electronic and topological behaviors of the thallene. Due to the C3v symmetry of the two systems, the px and py orbitals at the Γ point have the non-Dirac band degeneracy. With spin–orbit coupling (SOC), topological nontrivial band gaps can be generated, giving rise to non-Dirac quantum spin Hall states in the two thallium hydride films. The nontrivial band gap for the monolayer Tl2H is very large (855 meV) due to the large on-site SOC of Tl px and py orbitals. The band gap in Tl2H2 is, however, small due to the band inversion between the Tl px/y and pz orbitals. It is worth noting that both the Tl2H and Tl2H2 monolayers exhibit strong Rashba spin splitting effects, especially for the monolayer Tl2H2 (αR = 2.52 eVÅ), rationalized well by the breaking of the structural inversion symmetry. The Rashba effect can be tuned sensitively by applying biaxial strain and external electric fields. Our findings provide an ideal platform for fabricating room-temperature spintronic and topological electronic devices.

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Large-scale thallene film with emergent spin-polarized states mediated by tin intercalation for spintronics applications

Cited by 4 publications

References 49 publications

Beyond the horizons of graphene: xenes for energy applications

Beyond the horizons of graphene: xenes for energy applications

Emergence of quasi-1D spin-polarized states in ultrathin Bi films on InAs(111)A for spintronics applications

Large-band-gap non-Dirac quantum spin Hall states and strong Rashba effect in functionalized thallene films

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