Large-signal analysis of p-type GaAs IMPATT diode

Abstract

This paper presents a detailed study of ptype Ga As IMPATT diode. This is important in order to get better insight into the operation of this type, which is not sufficiently studied. Hence it will be possible to design and optimize the structure of double-drift Ga As IMPATT and the circuit where this IMPATT is embedded. Some important conclusions concerning the effect of the peak value of the microwave signal on the IMPATT operation are drawn.