2011
DOI: 10.1063/1.3592206
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Large-signal and high-frequency analysis of nonuniformly doped or shaped pn-junction diodes

Abstract: An analytical theory of nonuniformly doped or shaped PN-junction diodes submitted to largesignals at high frequencies is presented. The resulting expressions can be useful to evaluate the performance of semiconductor device modeling software. The transverse averaging technique is employed to reduce the three-dimensional charge carrier transport equations into the quasi-onedimensional form, with all physical quantities averaged out over the longitudinally-varying cross section. Although, it is assumed an axial … Show more

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Cited by 2 publications
(3 citation statements)
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“…Defining the average of a scalar, φ( r, z), and the average of a vector, V ( r, z), over the cross-section area for a axially symmetric wellbore [21,22]. Differently from the local instant formulation [18], there is no need to assume the area is constant along the longitudinal direction.…”
Section: Quasi 3d Case -Transverse Averaging Techniquementioning
confidence: 99%
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“…Defining the average of a scalar, φ( r, z), and the average of a vector, V ( r, z), over the cross-section area for a axially symmetric wellbore [21,22]. Differently from the local instant formulation [18], there is no need to assume the area is constant along the longitudinal direction.…”
Section: Quasi 3d Case -Transverse Averaging Techniquementioning
confidence: 99%
“…Frequently, conservation of particles, conservation of momentum and conservation of energy equations are used to provide insight into many physical problems. Phenomena ranging from flow of charge carriers in a semiconductor device to flow of oil and gas in a well can be described within such theoretical framework [18][19][20][21][22].…”
Section: Introductionmentioning
confidence: 99%
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