Large signal design criteria of distributed power amplifiers applied to a 2-18 GHz GaAs chip yielding high power density performances

Campovecchio, Michel; Hilal, R.; Bras, B. Le; Lajugie, M.; Obregon, J.

doi:10.1109/inmmc.1994.512528

Cited by 2 publications

(1 citation statement)

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“…However, its success in power applications has been limited for a number of fbndamental reasons such as: uneven output power distribution among the FETs [ 1] [2], and output power wastage in the back-ward waves [3][4] [5]. The first problem results in under utilisation of some of the FETs, whilst the second problem results in lowered efficiency.…”

Section: Introductionmentioning

confidence: 99%

Analysis of the dual-fed distributed power amplifier

Eccleston

Ong²,

Kooi³

et al.

1999 Asia Pacific Microwave Conference. APMC'99. Microwaves Enter the 21st Century. Conference Proceedings (Cat. No.99TH8473)

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The dual-fed distributed amplifier is a variation of the conventional single-fed distributed amplifier. Namely, the input signal is fed to both ends of the input line and the power appearing at the ends of the output line is combined. This approach has the advantages of utilising power in both the forward and backward travelling waves on the output line, and the drain output power can be equalised among the FETs. In this paper, the operational behaviour of the dual-fed distributed power amplifier is investigated and the optimum operating conditions are identified. It has been shown that uniform power distribution can be achieved when the spacing between each FET has to of the order guide wavelength and is dependent on the phase difference of the two input signals.

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Section: Introductionmentioning

confidence: 99%