Large-signal performance of high-BV/sub CEO/ graded epi-base SiGe HBTs at wireless frequencies

Greenberg, D.; Rivier, Michel; Girard, P.; Bergeault, E.; Moniz, J.M.; Ahlgren, D.; Freeman, G.; Subbanna, S.; Jeng, S. J.; Stein, K.; Nguyen-Ngoc, D.; Schonenberg, K.; Malinowski, J.; Colavito, D.; Harame, D.L.; Meyerson, B.S.

doi:10.1109/iedm.1997.650502

Cited by 21 publications

(5 citation statements)

References 4 publications

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“…The emitter finger spacing, which is the width of the base metal in a self-aligned structure, affects the total base resistance, as well as the base-collector junction capacitance . Increasing the finger spacing will increase , which will adversely affect the , as expressed in (5). The advantage of a wide finger spacing is reduced thermal effects, which can significantly degrade the HBT power performance [17].…”

Section: B Lateral Layout Design Considerationmentioning

confidence: 99%

A high-power and high-gain X-band Si/SiGe/Si heterojunction bipolar transistor

Mohammadi

Bhattacharya

et al. 2002

IEEE Trans. Microwave Theory Techn.

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A double mesa-type Si/SiGe/Si (n-p-n) heterojunction bipolar transistor (HBT) with record output power and power gain at-band (8.4 GHz) is demonstrated. The device exhibits collector breakdown voltage BV CBO of more than 24 V and a maximum oscillation frequency max of 37 GHz. Under continuous-wave operation and class-AB biasing conditions, 24.2-dBm (263-mW) RF output power with concurrent gain of 6.9 dB is measured at the peak power-added efficiency (28.1%) from a single ten-emitter fingers (780-m 2 emitter area) common-base HBT. The maximum RF output power achieved is as high as 26.3 dBm (430 mW in saturation) and the maximum collector efficiency is 36.9%. The low collector doping concentration together with the device layout result in negligible thermal effects across the transistor and greatly simplifies the large-signal modeling. The conventional Gummel-Poon model yields good agreement between the modeled and the measured dc characteristics and small-signal-parameters. The accuracy of the model is further validated with the measured power performance of the SiGe power HBT at-band. These results set a benchmark for power performance for SiGe-based HBTs and indicate promise for their implementation in efficient-band poweramplifier circuits.

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Section: B Lateral Layout Design Considerationmentioning

confidence: 99%

A high-power and high-gain X-band Si/SiGe/Si heterojunction bipolar transistor

Mohammadi

Bhattacharya

et al. 2002

IEEE Trans. Microwave Theory Techn.

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“…The data point of Nii et al [37] shows good balance between high BV CEO and also high f max . From the burning-in criterion the other acceptable values are those of Cressler (IBM) [4], Schüppen [21], and Greenberg (IBM) [38] for a SiGe HBT. The values of Sung (AT&T) [39] and Blair (National) [40] for a Si BJT are also reasonable.…”

Section: Transistors With High Bv Ceo and High F Maxmentioning

confidence: 99%

“…The values of Sung (AT&T) [39] and Blair (National) [40] for a Si BJT are also reasonable. [21], Greenberg [38], Cressler [4], Sung [39] and Blair [40]. The data shown by open circles are taken from figure 12 of [37].…”

Section: Transistors With High Bv Ceo and High F Maxmentioning

confidence: 99%

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SiGe HBT for application in BiCMOS technology: II. Design, technology and performance

Jain

Decoutere

Willander

et al. 2001

Semicond. Sci. Technol.

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SiGe technology has acquired great importance in recent years. Recent advances made in the SiGe HBT technology for analogue applications are discussed in this two-part review paper. Strain, stability, reliability, mobility of charge carriers, bandgap narrowing and effective density of states of SiGe layers have been discussed in part I. This paper (part II) is devoted to the HBTs: their design and performance. The two designs of the HBTs developed by IBM and by Daimler-Benz are discussed. Their relative merits and constraints imposed by the stability criterion on each design are described. The technology used for implementing the two designs is also described. The dc and ac characteristics and Ge profiles needed to optimize different figures of merit are discussed in detail. The parasitic barriers created by outdiffusion of B and also on operating the HBT at high current densities are explained. High injection barriers can be suppressed by a special design of the Ge profiles. Introduction of C in the base suppresses outdiffusion of B. HBTs with SiGeC base layers are discussed. Issues involved in simultaneous optimization of f T , f max and BV CEO are addressed. Values of f T , f max and BV CEO of high-performance HBTs are compiled and given in a table. The noise characteristics of the SiGe HBTs are far superior to those of III-V devices. Noise in SiGe HBTs is discussed in detail. Finally, a summary of selected circuits that have been fabricated using SiGe HBTs is given.

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“…1 Meanwhile, high performance large-area SiGe power HBTs and SiGe HBT-based power ampli¯ers capable of operating at radio frequency (RF)/microwave frequency have been developed, using both in-house process and commercial SiGe BiCMOS process. [2][3][4] Furthermore, the SiGe power HBTs and power ampli¯ers have demonstrated great possibilities to integrate high-frequency power ampli¯ers on Si chip together with CMOS circuits to realize the SiGe BiCMOS system-on-a-chip (SoC). 1 It is well known that SiGe HBTs have the advantages of compactness, light-weight, good reliability and compatible to CMOS fabrication process.…”

Section: Introductionmentioning

confidence: 99%

EXPERIMENTAL CHARACTERIZATION OF PROTON RADIATED SiGe POWER HBTs AT EXTREME TEMPERATURES

Qin

Jiang

et al. 2013

J CIRCUIT SYST COMP

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The performances of proton irradiated silicon-germanium (SiGe) power heterojunction bipolar transistors (HBTs) at extreme temperatures (liquid nitrogen temperature and high stagetemperature of 120 C with junction temperature over 160 C) are reported in this work. SiGe power HBTs with total emitter area of $ 1460 m 2 are fabricated in a commercial BiCMOS process, and irradiated with proton at di®erent°uences from 1 Â 10 12 p/cm 2 to 5 Â 10 13 p/cm 2 . Experimental characterizations are conducted for pre-and post-radiation devices at room temperature, cryogenic temperature and high temperature. The results demonstrate that the proton-irradiated SiGe power HBTs are naturally suitable for electronic operations at extreme temperatures. Speci¯cally, investigation of proton radiation on SiGe power HBTs at liquid nitrogen temperature (77 K) indicates a signi¯cant potential for space applications. In addition, SiGe power HBTs show better tolerance of proton radiation at high temperature of 120 C (junction temperature over 160 C). SiGe power HBTs demonstrate great potential in power ampli¯cation for wireless communication systems under severe radiation and extreme temperature environment (cryogenic and high temperatures) even without any intentional radiation hardening.

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Large-signal performance of high-BV/sub CEO/ graded epi-base SiGe HBTs at wireless frequencies

Cited by 21 publications

References 4 publications

A high-power and high-gain X-band Si/SiGe/Si heterojunction bipolar transistor

A high-power and high-gain X-band Si/SiGe/Si heterojunction bipolar transistor

SiGe HBT for application in BiCMOS technology: II. Design, technology and performance

EXPERIMENTAL CHARACTERIZATION OF PROTON RADIATED SiGe POWER HBTs AT EXTREME TEMPERATURES

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