2016
DOI: 10.1021/acs.nanolett.6b00171
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Large Spatially Resolved Rectification in a Donor–Acceptor Molecular Heterojunction

Abstract: We demonstrate that rectification ratios (RR) of 250 ( 1000) at biases of 0.5 V (1.2 V) are achievable at the two-molecule limit for donor-acceptor bilayers of pentacene on C 60 on Cu using scanning tunneling spectroscopy and microscopy. Using first-principles calculations, we show that the system behaves as a molecular Schottky diode, with a tunneling transport mechanism from semiconducting pentacene to Cu-hybridized metallic C 60 . Low-bias RR's vary by two orders-of-magnitude at the edge of these molecular … Show more

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Cited by 22 publications
(26 citation statements)
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“…This behavior was inferred to a Fermi level pinning effect implying that the hybridization of the orbitals at the interface pinpoints the energy of the HOMO level; this pinning is induced by the appearance of an increased charge transfer (and hence increased interface dipole) from the metal to the molecule in the junction when the HOMO level in the isolated molecule gets increasingly deeper. Such pinning effects have also been recently exploited to design model molecular rectifiers with high rectification ratios both theoretically, and experimentally . A similar HOMO alignment was also calculated for biphenyl derivatives chemisorbed via sulfur on gold when introducing an electron accepting (nitrile) or electron donating (amino) substituent on the terminal carbon atom, although the pinning mechanism is different here; indeed, when considering an infinite layer of neutral and asymmetric molecules, a different ionization potential is computed in the left side versus right side of the system because the vacuum level shifts are different on the two sides.…”
Section: Introductionmentioning
confidence: 89%
“…This behavior was inferred to a Fermi level pinning effect implying that the hybridization of the orbitals at the interface pinpoints the energy of the HOMO level; this pinning is induced by the appearance of an increased charge transfer (and hence increased interface dipole) from the metal to the molecule in the junction when the HOMO level in the isolated molecule gets increasingly deeper. Such pinning effects have also been recently exploited to design model molecular rectifiers with high rectification ratios both theoretically, and experimentally . A similar HOMO alignment was also calculated for biphenyl derivatives chemisorbed via sulfur on gold when introducing an electron accepting (nitrile) or electron donating (amino) substituent on the terminal carbon atom, although the pinning mechanism is different here; indeed, when considering an infinite layer of neutral and asymmetric molecules, a different ionization potential is computed in the left side versus right side of the system because the vacuum level shifts are different on the two sides.…”
Section: Introductionmentioning
confidence: 89%
“…11,12 While the behavior of heterojunctions in macroscopic semiconductor crystals has been extensively studied, 13 heterojunction behavior in molecular nanostructures is not as well understood. [14][15][16][17] Bottom-up GNR heterojunctions have previously been fabricated by an approach that combines two different molecular precursor types, thus yielding either impurity-modulated 18 or widthmodulated 19 GNR heterojunctions. This fabrication method, however, depends on the random process of precursor self-assembly and does not allow heterojunction fabrication or modification after a GNR has been synthesized.…”
Section: Introductionmentioning
confidence: 99%
“…1 Such low rectification is probably better termed asymmetry (of the I-V curve). A very few molecular junctions have reached RR ≥ 1000, using a donor-acceptor,381 ferrocene redox center,382 , or with a C60 monolayer 383. There are a few different possible mechanisms that explain rectification, which involves either specific donor / acceptor levels in the molecule or just the built-in field within the film (see Ref.1 for a detailed explanation).…”
mentioning
confidence: 99%