2023
DOI: 10.1021/acsami.3c12342
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Large Thermo-Spin Effects in Heusler Alloy-Based Spin Gapless Semiconductor Thin Films

Amit Chanda,
Deepika Rani,
Derick DeTellem
et al.

Abstract: Recently, Heusler alloy-based spin gapless semiconductors (SGSs) with high Curie temperature (T C ) and sizable spin polarization have emerged as potential candidates for tunable spintronic applications. We report comprehensive investigation of the temperature-dependent ANE and intrinsic longitudinal spin Seebeck effect (LSSE) in CoFeCrGa thin films grown on MgO substrates. Our findings show that the anomalous Nernst coefficient for the MgO/CoFeCrGa (95 nm) film is ≈1.86 μV K −1 at room temperature, which is n… Show more

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Cited by 4 publications
(2 citation statements)
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“…To quantify the temperature evolution of ⟨ξ⟩ for our TmIG/Pt bilayer films, we have employed a model proposed by Jimenez-Cavero et al, according to which the total temperature difference (Δ T ) across the GSGG/TmIG/Pt heterostructure can be expressed as a linear combination of temperature drops in the Pt layer, at the TmIG/Pt interface, in the TmIG layer, at the GSGG/TmIG interface,and across the GSGG substrate as well as in the N-grease layers (thickness ∼1 μm) on both sides of the GSGG/TmIG heterostructures as, Δ T = Δ T P t + Δ T normalPt / normalTmIG + Δ T TmIG + Δ T normalTmIG / normalGSGG + Δ T GSGG + 2 Δ T N ‐grease (see Figure a). Assuming negligible drops in Δ T in the Pt layer and at the GSGG/TmIG and Pt/TmIG interface, , the total temperature difference can be approximately written as Δ T = Δ T normalPt / normalTmIG + Δ T TmIG + Δ T GSGG + 2 Δ T N ‐g r e a s e Considering these contributions, the temperature drops in the TmIG layer and at the TmIG/Pt interface can be written as ,…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…To quantify the temperature evolution of ⟨ξ⟩ for our TmIG/Pt bilayer films, we have employed a model proposed by Jimenez-Cavero et al, according to which the total temperature difference (Δ T ) across the GSGG/TmIG/Pt heterostructure can be expressed as a linear combination of temperature drops in the Pt layer, at the TmIG/Pt interface, in the TmIG layer, at the GSGG/TmIG interface,and across the GSGG substrate as well as in the N-grease layers (thickness ∼1 μm) on both sides of the GSGG/TmIG heterostructures as, Δ T = Δ T P t + Δ T normalPt / normalTmIG + Δ T TmIG + Δ T normalTmIG / normalGSGG + Δ T GSGG + 2 Δ T N ‐grease (see Figure a). Assuming negligible drops in Δ T in the Pt layer and at the GSGG/TmIG and Pt/TmIG interface, , the total temperature difference can be approximately written as Δ T = Δ T normalPt / normalTmIG + Δ T TmIG + Δ T GSGG + 2 Δ T N ‐g r e a s e Considering these contributions, the temperature drops in the TmIG layer and at the TmIG/Pt interface can be written as ,…”
Section: Resultsmentioning
confidence: 99%
“…(see Figure 5a). Assuming negligible drops in ΔT in the Pt layer and at the GSGG/TmIG and Pt/TmIG interface, 68,69 the total temperature difference can be approximately written as Considering these contributions, the temperature drops in the TmIG layer and at the TmIG/Pt interface can be written as 68,69 = + + T T…”
Section: ÷÷÷÷÷÷mentioning
confidence: 99%