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Dmochowski, J. E.; Langer, Judith; Raczyńska, J.; Jantsch, W.

doi:10.1103/physrevb.38.3276

Cited by 53 publications

(15 citation statements)

References 22 publications

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“…The upper limit results from the range of applicability of the present approximations. For the yttrium donor we obtain a maximum of α(hv) for hv = 153 meV, which agrees with the experimental value of 160 meV [1]. However, for the indium donor the maximum of the calculated α(hv) has not been reached in the above region, which means that the maximum lies at hv > 200 meV in comparison with the observed value of 235 meV.…”

supporting

confidence: 76%

“…This, in turn, leads to the shift of absorption band. however, the observed [1] difference between the absorption bands of both donors is surprisingly large. The shift of the absorption band maximum, calculated in the hydrogen-like model of the donor, is 7 meV, while the experimentally observed value is of the order of magnitude larger.…”

mentioning

confidence: 94%

“…The properties of the stable (Y) and bistable (In) donors are analyzed and quantatively described. It is shown that the bistability of donors and the shape of the infrared absorption band have the same origin, which is the combined effect of electron-LO-phonon coupling, conduction band non-parabolicity and short-range central-cell potential.PACS numbers: 71.55.-i.The absorption spectra due to donors in CdF2 possess many characteristic features [1]. One of them results from the bistability of donors and has been discussed in the previous paper [2].…”

mentioning

confidence: 99%

“…The absorption spectra due to donors in CdF2 possess many characteristic features [1]. One of them results from the bistability of donors and has been discussed in the previous paper [2].…”

mentioning

confidence: 99%

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Infrared Absorption on Shallow Donors in CdF₂

Bednarek

Adamowski

1991

Acta Phys. Pol. A

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A theoretical description of shallow donor absorption spectra in CdF2 in the infrared region is given. The properties of the stable (Y) and bistable (In) donors are analyzed and quantatively described. It is shown that the bistability of donors and the shape of the infrared absorption band have the same origin, which is the combined effect of electron-LO-phonon coupling, conduction band non-parabolicity and short-range central-cell potential.PACS numbers: 71.55.-i.The absorption spectra due to donors in CdF2 possess many characteristic features [1]. One of them results from the bistability of donors and has been discussed in the previous paper [2]. Another one relies on the large difference in the absorption band shapes between the stable (yttrium) and bistable (indium) donors. For these donors the transition energies between 1s and np hydrogen-like states differ by 5 meV, i.e. merely 5% of the 1s ionisation energy. On the other hand, the absorption band. resulting from the transitions between the discrete donor states and conduction band states is much broader for the bistable donor (In) and has a maximum shifted towards high energy by about 75 meV with respect to the stable donor (Y). This effect is qualitatively clear and results from the following argumentation. The chemical shift of the hydrogen-like spectrum results from the short-range potential of the impurity atom core, which also changes a degree of localization of the 1s shallow donor state. This, in turn, leads to the shift of absorption band. however, the observed [1] difference between the absorption bands of both donors is surprisingly large. The shift of the absorption band maximum, calculated in the hydrogen-like model of the donor, is 7 meV, while the experimentally observed value is of the order of magnitude larger. The present paper provides an explanation of this effect.

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supporting

confidence: 76%

mentioning

confidence: 94%

mentioning

confidence: 99%

“…The absorption spectra due to donors in CdF2 possess many characteristic features [1]. One of them results from the bistability of donors and has been discussed in the previous paper [2].…”

mentioning

confidence: 99%

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Infrared Absorption on Shallow Donors in CdF₂

Bednarek

Adamowski

1991

Acta Phys. Pol. A

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“…For the bistable indium impurity in cadmium fluoride, a coexistence of strongly and weakly localized donor states has been obtained. The calculated energies for both the states and absorption band shape in the 3-eV range are in agreement with experiment.PACS numbers: 71.55.-i Optical absorption spectra of cadmium fluoride crystals doped with indium exhibit unusual properties [1,2,3]. In these crystals, the two asymmetric absorption bands are observed [2,3] with the maxima at 0.2 eV and 3 eV, respectively.…”

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confidence: 99%

Conduction Band Influence on the Properties of Bistable Donors

Bednarek

Adamowski

1991

Acta Phys. Pol. A

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A theoretical description of bistable donors in polar semiconductors is proposed. The donor states are described within the one-band approximation, which takes into account a finite width and nonparabolicity of the conduction band. The interaction between the defect and the crystal 1attice is assumed in the Fröhlich form. For the bistable indium impurity in cadmium fluoride, a coexistence of strongly and weakly localized donor states has been obtained. The calculated energies for both the states and absorption band shape in the 3-eV range are in agreement with experiment.PACS numbers: 71.55.-i Optical absorption spectra of cadmium fluoride crystals doped with indium exhibit unusual properties [1,2,3]. In these crystals, the two asymmetric absorption bands are observed [2,3] with the maxima at 0.2 eV and 3 eV, respectively. The sample cooled in darkness shows in low temperatures the 3-eV band only, while the sample illuminated with the white light starts to absorb the infrared (IR) radiation in the 0.2-eV band. During the illumination, the IR absorption increases, while the absorption in the visible and ultraviolet range decreases. The threshold for the visible absorption is determined to be 1.9 eV [2] and the thermal activation energy for the Hall effect is 0.25 eV [2]. The difference between these values, i.e. 1.65 eV, is the Stokes shift. These results lead to the conclusion [2,3] that the indium impurity in CdF 2 is a bistable donor which possesses two sets of quantum states with energy levels in a gap: strongly localized states, which are responsible for the absorption in the 3-eV range, and weakly localized shallow states, which are responsible for the absorption in the 0.2-eV range. This interpretation has been confirmed by the results of theoretical investigations [4,5]. In the present paper, the theory [4,5] is extended by taking into account a finite width of the conduction band, performing all the calculations in the k-space with the Debye

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Deep Centers in Semiconductors

Feichtinger

2013

Materials Science and Technology

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The sections in this article are Introduction Shallow and Deep Impurities: Technological and Physical Relevance The Identification Problem and the Localization‐Delocalization Puzzle Deep Centers: Electronic Transitions and Concepts Ionization at Thermal Equilibrium Franck‐Condon Transitions and Relaxation Phenomenological Models and Electronic Structure The Point‐Ion Crystal Field Model The Defect Molecule Picture Example: Nitrogen in Gallium Phosphide Transition Metals Transition Metals: Results of Quantitative Calculations Gap Levels and High Spin–Low Spin Ordering Coulomb Induced Nonlinear Screening and Self‐Regulating Response Ionization Energies and Trends Transition Metals in Silicon Compound Semiconductors and Bulk References Excited States Internal Transitions Rydberg‐Like States Properties of Selected Systems Chalcogens in Silicon Sulfur, Selenium, and Tellurium in Silicon Oxygen and Nitrogen in Silicon DX Centers in Al x Ga 1− x As Large Lattice Relaxation and Metastability Microscopic Models for DX Centers Deep Transition Metal Donor–Shallow Acceptor Pairs in Silicon Electronic Structure and Trends Charge State Controlled Metastability Thermal Donors in Silicon Hydrogen Passivation Appendix: Ionization Energies and Level Positions of Isolated Transition Metal Impurities in Silicon

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Large- versus small-lattice-relaxation models of theDXcenters inGa1−xAl

Cited by 53 publications

References 22 publications

Infrared Absorption on Shallow Donors in CdF₂

Infrared Absorption on Shallow Donors in CdF₂

Conduction Band Influence on the Properties of Bistable Donors

Deep Centers in Semiconductors

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Large- versus small-lattice-relaxation models of theDXcenters inGa1−xAl

Cited by 53 publications

References 22 publications

Infrared Absorption on Shallow Donors in CdF2

Infrared Absorption on Shallow Donors in CdF2

Conduction Band Influence on the Properties of Bistable Donors

Deep Centers in Semiconductors

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Product

Resources

About

Infrared Absorption on Shallow Donors in CdF₂

Infrared Absorption on Shallow Donors in CdF₂