Large VLWIR Hg1−xCdxTe photovoltaic detectors

D'Souza, Arvind I.; Dawson, Larry C.; Staller, Craig O.; Wijewarnasuriya, P. S.; DeWames, R. E.; McLevige, W. V.; Arias, J. M.; Edwall, D. D.; Hildebrandt, G.

doi:10.1007/s11664-000-0196-z

Cited by 8 publications

(3 citation statements)

References 15 publications

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“…8,9 In the absence of any nonideal diode currents (e.g., surface recombination, bulk generation recombination, and trap-assisted tunneling currents) and lateral carrier-diffusion effects, a simple one-dimensional analysis of diode diffusion currents can be employed to determine the relation of R 0 A to HgCdTe material parameters, such as minority carrier (hole) lifetime ( p ), hole diffusion length (L p ), back-interface recombination velocity (S), and absorbing layer thickness (d): 8,10,11 (1) where N d is the donor doping density on the n side of the P ϩ /n junction, n i is the intrinsic carrier concentration, k is the Boltzmann's constant, and T is the temperature. 8,9 In the absence of any nonideal diode currents (e.g., surface recombination, bulk generation recombination, and trap-assisted tunneling currents) and lateral carrier-diffusion effects, a simple one-dimensional analysis of diode diffusion currents can be employed to determine the relation of R 0 A to HgCdTe material parameters, such as minority carrier (hole) lifetime ( p ), hole diffusion length (L p ), back-interface recombination velocity (S), and absorbing layer thickness (d): 8,10,11 (1) where N d is the donor doping density on the n side of the P ϩ /n junction, n i is the intrinsic carrier concentration, k is the Boltzmann's constant, and T is the temperature.…”

Section: Device Architecturementioning

confidence: 99%

Molecular-beam epitaxial growth and high-temperature performance of HgCdTe midwave infrared detectors

Lyon

Jensen

Kasai

et al. 2002

J. Electron. Mater.

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Section: Device Architecturementioning

confidence: 99%

Molecular-beam epitaxial growth and high-temperature performance of HgCdTe midwave infrared detectors

Lyon

Jensen

Kasai

et al. 2002

J. Electron. Mater.

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“…However, one of the big problems associated with the planar-type detector arrays is the extension of the photo-sensitive area due to the lateral collection effect of photogenerated holes in the absorbing layer [5]. Recently, instead of suppressing the extension of the photo-sensitive area, this lateral collection effect in the planar-type detector arrays is utilized in the fabrication of VLWIR HgCdTe FPA detector chips and visible CCD detectors [6]. To investigate the photoresponse characteristics of the lateral collection effect and then further apply it to fabricate InGaAs detectors is meaningful.…”

Section: Introductionmentioning

confidence: 99%

The temperature-dependent photoresponse uniformity of an InGaAs subpixels infrared detector by the LBIC technique

Deng¹,

Tang²,

Li³

et al. 2012

Semicond. Sci. Technol.

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The front-illuminated InP/InGaAs/InP PIN hetero-junction photovoltaic subpixels infrared detector has been achieved based on the lateral collection effect of photogenerated carriers. The photoresponse uniformity of the detector is carried out with a LBIC technique at different temperatures between 88 K and 296 K. With the aid of LBIC and the scanning capacitance microscopy (SCM) technique, the holes diffusion length L p related to temperature was obtained. The result shows that the photoresponse uniformity decreases with temperature dropping, and L p also varies directly in proportional to √ T . The acoustic phonon scattering is the chief scattering mechanism existing in the detector with doped InGaAs (n ≈ 5 × 10 16 cm −3 ) in the measured temperature range. The LBIC technique can be utilized effectively in the measurement of photoresponse uniformity of InGaAs infrared detectors, especially for the InGaAs subpixels detectors.

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“…[1][2][3] Another technique for increasing the operability of VLWIR FPAs is by each pixel being divided into subelements. 4 A pixel divided into four subelements results in the probability of any single subelement having a defect being lowered by a factor of four relative to the probability that a single large pixel has a defect.…”

mentioning

confidence: 99%

Monte Carlo Modeling of VLWIR HgCdTe Interdigitated Pixel Response

D'Souza¹,

Stapelbroek²,

Wijewarnasuriya

2010

Journal of Elec Materi

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Increasing very long-wave infrared (VLWIR, k c % 15 lm) pixel operability was approached by subdividing each pixel into four interdigitated subpixels. High response is maintained across the pixel, even if one or two interdigitated subpixels are deselected (turned off), because interdigitation provides that the preponderance of minority carriers photogenerated in the pixel are collected by the selected subpixels. Monte Carlo modeling of the photoresponse of the interdigitated subpixel simulates minority-carrier diffusion from carrier creation to recombination. Each carrier generated at an appropriately weighted random location is assigned an exponentially distributed random lifetime s i , where hs i i is the bulk minority-carrier lifetime. The minority carrier is allowed to diffuse for a short time ds, and the fate of the carrier is decided from its present position and the boundary conditions, i.e., whether the carrier is absorbed in a junction, recombined at a surface, reflected from a surface, or recombined in the bulk because it lived for its designated lifetime. If nothing happens, the process is then repeated until one of the boundary conditions is attained. The next step is to go on to the next carrier and repeat the procedure for all the launches of minority carriers. For each minority carrier launched, the original location and boundary condition at fatality are recorded. An example of the results from Monte Carlo modeling is that, for a 20-lm diffusion length, the calculated quantum efficiency (QE) changed from 85% with no subpixels deselected, to 78% with one subpixel deselected, 67% with two subpixels deselected, and 48% with three subpixels deselected. Demonstration of the interdigitated pixel concept and verification of the Monte Carlo modeling utilized k c (60 K) % 15 lm HgCdTe pixels in a 96 9 96 array format. The measured collection efficiency for one, two, and three subelements selected, divided by the collection efficiency for all four subelements selected, matched that calculated using Monte Carlo modeling.

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Large VLWIR Hg1−xCdxTe photovoltaic detectors

Cited by 8 publications

References 15 publications

Molecular-beam epitaxial growth and high-temperature performance of HgCdTe midwave infrared detectors

Molecular-beam epitaxial growth and high-temperature performance of HgCdTe midwave infrared detectors

The temperature-dependent photoresponse uniformity of an InGaAs subpixels infrared detector by the LBIC technique

Monte Carlo Modeling of VLWIR HgCdTe Interdigitated Pixel Response

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