Laser ablation deposition of titanium nitride films on silicon substrates at room temperature

Auciello, Orlando; Barnes, Teresa M.; Chevacharoenkul, S.; Schreiner, A. F.; McGuire, G. E.

doi:10.1016/0040-6090(89)90473-2

Cited by 18 publications

(6 citation statements)

References 18 publications

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“…Due to the wide range of applications, TiN films have been grown for decades on a variety of substrates using a broad variety of techniques ranging from chemical vapor deposition [25,26] and atomic layer deposition (ALD) [27] to reactive sputtering [28,29] and pulsed laser deposition (PLD) [30,31], with reactive sputtering being the most common method. For superconducting applications, however, only ALD and reactive sputtering have been widely used, the former mostly for ultrathin, disordered film deposition for the superconductor-insulator studies, and the latter for the detector and qubit applications.…”

Section: Introductionmentioning

confidence: 99%

High quality superconducting titanium nitride thin film growth using infrared pulsed laser deposition

Torgovkin¹,

Chaudhuri²,

Ruhtinas³

et al. 2018

Supercond. Sci. Technol.

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Superconducting titanium nitride (TiN) thin films were deposited on magnesium oxide, sapphire and silicon nitride substrates at 700 • C, using a pulsed laser deposition (PLD) technique, where infrared (1064 nm) pulses from a solid-state laser were used for the ablation from titanium target in a nitrogen atmosphere. Structural studies performed with X-ray diffraction showed the best epitaxial crystallinity for films deposited on MgO. In the best films, superconducting transition temperatures, T C , as high as 4.8 K were observed, higher than in most previous superconducting TiN thin films deposited with reactive sputtering. A room temperature resistivity down to ∼ 17µΩcm and residual resistivity ratio (RRR) up to 3 were observed in the best films, approaching reported single crystal film values, demonstrating that PLD is a good alternative to reactive sputtering for superconducting TiN film deposition. For less than ideal samples, the suppression of the film properties were correlated mostly with the unintended incorporation of oxygen (5-10 at. %) in the film, and for high oxygen content films, vacuum annealing was also shown to increase the T C. On the other hand, superconducting properties were surprisingly insensitive to the nitrogen content, with high quality films achieved even in the highly nitrogen-rich, Ti:N = 40/60 limit. Measures to limit oxygen exposure during deposition must be taken to guarantee the best superconducting film properties, a fact that needs to be taken into account with other deposition methods, as well.

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Section: Introductionmentioning

confidence: 99%

High quality superconducting titanium nitride thin film growth using infrared pulsed laser deposition

Torgovkin¹,

Chaudhuri²,

Ruhtinas³

et al. 2018

Supercond. Sci. Technol.

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“…The advantage of the method is a good control of the layer growing process by adjusting of wide set of technology parameters such as: the energy of laser beam, the substrate temperature, the pressure of ambient gas, etc. Thus the method is widely used for layer deposition not only of classical materials (metals, semiconductors) but also such specific compounds like high-temperature superconductors [11][12][13] new metal alloys [14][15][16][17], biocompatible coatings [18,19], laser crystals [20,21] and polymers [22]. The determination of the technology parameters of layer growth is realised either by the theoretical estimation or by in-situ monitoring during the layer deposition by RHEED [23].…”

Section: Introductionmentioning

confidence: 99%

Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations

Pyziak¹

2003

Semicond. Phys. Quantum Electron. Optoelectron.

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Fractal analysis was used for the description of the geometry of the clusters formed within the Monte Carlo simulation of the first monolayer growth on Si substrate. Pulse laser deposition method was assumed for the epitaxy. Layers were obtained for various substrate temperatures varying in the range from 600 K to 800 K. The topography of plane clusters formed were characterised by their fractal box-like dimension. The relation between this dimension and the shape of the clusters was addressed.

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Section: Introductionmentioning

confidence: 99%

“…1 Due to its excellent properties such as thermodynamic stability, low electrical conductivity, and high hardness, TiN thin films have been widely used as diffusion barriers in microelectronics contracts, 2 wavelength-selective transparent optical coatings, and coatings for high-speed tools. Use of an ArF excimer laser ͑193 nm͒ for the room temperature growth of stoichiometric, crystalline TiN films was reported by Auciello et al 1 Because of the impure bulk TiN target, the films deposited on Si ͑100͒ substrates contained a substantial amount of oxygen and carbon impurities. The conventional methods include: ͑a͒ chemical vapor deposition, 4 ͑b͒ physical vapor deposition such as reactive sputtering of Ti in nitrogen ambient 5 or nitridation of sputtered Ti films, 6 ͑c͒ pulsed laser deposition ͑PLD͒ of pure metal Ti in nitrogen ambient.…”

Section: Introductionmentioning

confidence: 99%

“…3 Many techniques have been employed for depositing TiN thin films. 1 In our work, a PLD method was employed, in which a bulk TiN target was ablated in high vacuum, resulting in the deposition of TiN thin films on hydrogen-terminated silicon ͑100͒. 7 PLD is a highly nonequilibrium process that produces an intense plasma plume and transfers the target composition to the deposited film.…”

Section: Introductionmentioning

confidence: 99%

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Pulsed laser deposition of TiN thin film on silicon (100) at different temperatures

Wang

Ren

et al. 1999

Journal of Laser Applications

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Femtosecond pulsed laser deposition of amorphous, ultrahard boride thin filmsTitanium nitride ͑TiN͒ thin films were deposited on hydrogen-terminated silicon ͑100͒ substrates by pulsed laser ablation of a ceramic TiN target ͑purity: 99.9%͒. A KrF excimer laser with a wavelength of 248 nm and a pulse duration of 23 ns was used as the laser source. The vacuum chamber was maintained at a pressure of 10 Ϫ5 Torr during the deposition and the substrate temperature ranged from room temperature to 600°C. X-ray diffraction, Raman spectroscopy, nanoindentation, and surface profile measurements were performed to characterize the properties of the deposited thin films. The dependence of the hardness, stoichiometry, and crystallinity of the thin films on substrate temperature was investigated. X-ray diffraction measurement showed that the full width at half maximum of the TiN ͑200͒ line reached 0.24°at 600°C. The hardness of the thin films deposited at 600°C was found to be as high as 26 GPa. The influence of the substrate temperature on the electronic properties of the deposited thin films was studied by Raman spectroscopy. Roughness of the deposited thin films was also investigated.

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Laser ablation deposition of titanium nitride films on silicon substrates at room temperature

Cited by 18 publications

References 18 publications

High quality superconducting titanium nitride thin film growth using infrared pulsed laser deposition

High quality superconducting titanium nitride thin film growth using infrared pulsed laser deposition

Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations

Pulsed laser deposition of TiN thin film on silicon (100) at different temperatures

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