Laser ablation fabrication of a p-NiO/n-Si heterojunction for broadband and self-powered UV–Visible–NIR photodetection

Abstract

We report on the optoelectronic characteristics of p-NiO/n-Si heterojunction photodiodes for broadband photodetection, fabricated by depositing a p-type NiO thin film onto a commercial n-type silicon substrate using pulsed laser deposition (PLD) technique. The structural properties of the PLD-grown p-NiO material were analysed by means of X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), confirming its crystalline nature and revealing the presence of Ni vacancies, respectively. Hall measurements confirmed the p-type semiconducting nature of the NiO thin film having a carrier concentration of 8.4 × 1016 cm-3. The current-voltage (I-V) characteristics of the p-NiO/n-Si heterojunction photodevice were investigated under different wavelengths ranging from UV to NIR. The self-bias properties under different illuminations of light were also explored systematically. Under self-bias condition, the photodiode exhibits excellent responsivities of 12.5 mA.W-1, 24.6 mA.W-1 and 30.8 mA.W-1 with illumination under 365 nm, 485 nm, and 850 nm light, respectively. In addition, the time dependency of the photoresponse of the fabricated photodevice has also been investigated and discussed thoroughly.

A novel NiO-based p-i-n ultraviolet photodiode

“…Although there are several NiO-based p-n and p-i-n junctions photodetector studies in the literature, these are not in homojunction structure due to the challenge of making n-type doped NiO. Studies in the literature have been mainly focused on the heterostructures that comprised of a p-type NiO and n-type of other semiconductors such as ZnO [16][17][18][19][20] TiO2 [21,22] and Ga2O3 [23,24] for UV applications, and n-type Si [25,26] for UV-visible applications. While these kinds of NiO-based, highly sensitive, heterojunctions are utilized as a photodetector, to create NiO-based emitters the fabrication of homojunction p-n and p-i-n diodes are critical.…”

Advancements in Optical Communication Research: A Review of India's Progress

“…Photonic crystal based lasing and erbium-doped fiber lasing are also studied in IIT Kanpur. Apart from sources, photodetectors are also developed based on semiconductor waveguide (InGaAsP/InP) in IIT Kanpur and based on p-NiO/n-Si heterojunction using pulsed laser deposition technique in IIT Roorkee [18]. A broadband and high sensitivity perovskite photodetectors are developed by a IIT Bombay reserach group [19] and a compact on-chip photodetector in 850 nm wavelength band for communication is demonstrated by a group at CENSE, IISc [20].…”

Zero-bias error compensation method of laser gyro based on neural network

“…The core of the model is to obtain the standardisation constant and data centre of the original data through the self-organising feature mapping network, and the sample centre of the new sample data through the fastest decline of the expected variance of the OLS algorithm. Specifically, firstly, the temperature data and zero bias of the laser gyro are pre-processed, and the final sample space is determined (Wang, 2018;Chaoudhary et al, 2022;Zou et al, 2021;Klimkovich, 2020). Then, the sample data are classified by self-organising feature mapping network to obtain the classification results.…”