Laser and electron beam scanning of GaAs FETS

Edwards, W. D.; Haythornthwaite, R.F.

doi:10.1016/s0026-2714(82)80190-x

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1996

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“…We note, however, that Klein and Steckenbom [4] found a similar exponential dependence in n-channel GaAs photoconductors with a characteristic length of about 3 pm in the 4 to 7 V bias regime, which is comparable to our values (around 2.5 pm) (the channel length in [4] was also 10 pm). In [5], a similar exponential dependence was found beneath the drain metallization of a GaAs MESFET with a characteristic length of 37 pm. We found that the cathode regime is more sensitive, similarly to other reports [3 to 51.…”

Section: T a B L Esupporting

confidence: 61%