Laser annealing of electrodeposited CuInSe₂semiconductor precursors: experiment and modeling

Abstract

Rapid laser annealing converts CuInSe2 precursors into working semiconductors only when the precursor has suitable optical and microstructural properties.

Continuous-wave laser annealing of metallic layers for CuInSe2 solar cell applications: effect of preheating treatment on grain growth

“…LA induced crystallisation to produce 200 nm sized grains on a time scale of only 1 s. The LA absorbers could be converted into first working devices with a 23 mA cm −2 short circuit current. 7 Nonetheless, the material showed lateral non-uniform properties, which largely originated from the precursor deposition step.…”

“… 9,10 Preliminary work from our group using a 1064 nm CW laser on Cu/In/Se samples showed a large amount of secondary phases by XRD and a lack of clear evidence of CIS formation. 7 This was attributed to insufficient annealing temperature reached for elemental diffusion and reaction to occur, as well as the Se loss. 7 …”

“… 7 This was attributed to insufficient annealing temperature reached for elemental diffusion and reaction to occur, as well as the Se loss. 7 …”

“…Modelling of the optical absorption for the Cu/In/Se stacked precursor showed that the laser beam power (for 1 s annealing time) is dissipated within a narrow region at the surface of the In metal, with >80% of the irradiation being reflected. 7 Here, we increase the annealing time in order to form binary or ternary phases which would better absorb the radiation and consequently result in higher temperatures during LA. We investigate the reaction mechanism for LA Cu/In stacked metal precursors, by performing ex situ XRD, Raman and composition measurements.…”

Room Temperature Synthesis of Nanocubic CuInSe2 Thin Films

“…The methods for the synthesis are solvothermal approach, hot injection method, thermal decomposition, chemical bath deposition, electrode position etc. [7][8][9][10][11].…”