2013
DOI: 10.3367/ufne.0183.201307a.0673
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Laser applications in nanotechnology: nanofabrication using laser ablation and laser nanolithography

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Cited by 83 publications
(26 citation statements)
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“…It has been shown that, fixed the Ar pressure, at low laser pulses number, isolated nearly spherical nanoparticles are obtained, while at increasing laser pulses number clustered nanoparticles, islands and finally nearly percolated structures are observed on the samples surface. [24] The Ar pressure plays a similar role on the film morphologies at decreasing values, having fixed the laser pulse number.…”
Section: Introductionmentioning
confidence: 99%
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“…It has been shown that, fixed the Ar pressure, at low laser pulses number, isolated nearly spherical nanoparticles are obtained, while at increasing laser pulses number clustered nanoparticles, islands and finally nearly percolated structures are observed on the samples surface. [24] The Ar pressure plays a similar role on the film morphologies at decreasing values, having fixed the laser pulse number.…”
Section: Introductionmentioning
confidence: 99%
“…[22,23] The formation of silver and gold thin films on the porous Si can be obtained, also, by pulsed laser ablation (PLA). [24] In this method power laser pulses are used to evaporate material from the target surface which results in the formation of plasma plume. The ablated material is then collected on a substrate.…”
Section: Introductionmentioning
confidence: 99%
“…In principle, particles can be also heated by a rather weak laser energy absorption, or by the heat exchange with the surrounding liquid. These effects commonly lead to particle reshaping or even fragmentation (Antipov et al 2012;Makarov 2013). This process can become particularly important if liquid is heated up to a supercritical state (Abramov et al 2014).…”
Section: Nanoparticle Morphology and Optical Propertiesmentioning
confidence: 99%
“…On the other hand, for xenon, a lower yield (~0.5–0.7%) of EUV emission at 13.5 nm was found to be unacceptable for these applications . Tin has, however, been identified as a promising and energy‐efficient (~3–5% yield) plasma source for semiconductor lithographic applications …”
Section: Introductionmentioning
confidence: 99%