Laser-based technique of formation of CdTe — metal diode structures for high energy radiation detectors

Zelenska, Kateryna; Gnatyuk, Dmytro V.; Aoki, Toru

doi:10.1109/nssmic.2016.8069953

Cited by 6 publications

(4 citation statements)

References 9 publications

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“…Metal-CdTe Schottky diodes have been generally fabricated and used as X-and γ-ray detectors. (2)(3)(4)(5)9,12,20,21) On the other hand, In/CdTe/Au barrier structures formed by frontside (5)(6)(7) or backside laser irradiation (16)(17)(18)(19) have been considered as p-n junction diodes, which have also shown high detection efficiency. Figure 2 shows the schematic of the structures of In/CdTe/Au X-and γ-ray detectors formed as (a) a Schottky diode (without laser irradiation) and (b) a p-n-junction diode by backside laser irradiation.…”

Section: Resultsmentioning

confidence: 99%

“…A p-n junction was created in the CdTe subsurface layer by laser-induced backside doping with In atoms from the deposited In electrode, which served as the dopant source. (16)(17)(18)(19) A schematic of the experimental setup for the laser-induced doping procedure is shown in Fig. 1.…”

Section: Methodsmentioning

confidence: 99%

“…The optimal conditions for laser-induced backside doping were studied and estimated in our earlier publications. (16)(17)(18)(19) The selected laser energy in the experiments was E = 11 mJ for which the temperature of the In surface at the In/CdTe interface increased up to near the In melting point. The number of laser pulses, used for backside doping, was 30.…”

Section: Methodsmentioning

confidence: 99%

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Effects of Heating on Electrical and Spectral Properties of In/CdTe/Au X- and γ-ray Detectors with a Schottky Barrier or Laser-induced p–n Junction

Nishizawa¹,

Gnatyuk²,

Zelenska³

et al. 2020

Sensors and Materials

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The CdTe semiconductor has been used for X-and γ-ray imaging detectors owing to its sensitivity to ionizing radiation, high energy and spatial resolution, and ability to operate at room temperature. However, it is challenging to grow large-diameter CdTe. Therefore, we aim to develop large-area high-resolution X-ray imaging sensors by tiling small CdTe wafers. Postprocessing, bonding, and tiling require the heating of detectors; therefore, it is important to develop high-thermal-tolerance radiation sensors. We have fabricated two types of In/CdTe/Au diode detector (with a Schottky barrier and a p-n junction) using identical crystals and the same technological procedures except laser irradiation, and examined their resistance to heat treatment. The diodes with an In/CdTe rectifying contact and a p-n junction, formed by the laser-induced backside doping of the CdTe subsurface layer with In, had similar electrical and spectral characteristics, which did not significantly change after heating at temperatures below the In melting point (156 ℃). The Schottky diodes, subjected to heating at 200 and 300 ℃, exhibited the deterioration of the electrical characteristics (reverse dark current increased) and lost their detection ability. In contrast, the p-n junction diodes demonstrated highly stable I-V characteristics, and the measured 241 Am radioisotope emission spectra did not degrade even after melting and solidifying the In electrode.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Effects of Heating on Electrical and Spectral Properties of In/CdTe/Au X- and γ-ray Detectors with a Schottky Barrier or Laser-induced p–n Junction

Nishizawa¹,

Gnatyuk²,

Zelenska³

et al. 2020

Sensors and Materials

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“…Laser processing of CdTe has been successfully used to modify the structure and properties of surface nano-layers and change different characteristics of the semiconductor. Of particular interest is application the laser assisted doping technique to suppress the dopant self-compensation mechanism, and reach introducing and efficient electrical activation of In atoms in CdTe [5][6][7][8][9][10]. We have continued development and optimization the methods of chemical surface processing of CdTe crystals, laser induced doping technique for creation of a built-in p-n junction by nanosecond laser irradiation of the CdTe crystals precoated with a relatively thick In film which serves both as an n-type dopant source and electrical contact (electrode) after the doping and deposition of the second electrode [7][8][9][10].The formation of a surface nano-layer highly-doped with In in semi-insulating detector-grade p-like CdTe crystals and creation of In/CdTe/Au diodes with a shallow and sharp p-n junction has been studied and mechanism of laser-induced doping is analyzed.…”

Section: Introductionmentioning

confidence: 99%

Modeling of diffusion motion of In nanoparticles in a CdTe crystal during laser-induced doping

Levytskyi

Zhao

Cao

et al. 2021

Phys. Chem. Solid St.

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In order to solve the problem of the ohmic contact between the crystal surface and the metal electrode in the manufacturing process of the X/γ-ray detector, this paper uses a laser to probe the doping process of In/CdTe crystals in different media. In this experiment, the Traveling Heater Method (THM) is used to obtain CdTe(111) crystals that meet the requirements (ρ >109Ω∙cm). In and Au materials are respectively coated on the surface of the crystal sample by the vacuum thermal evaporation method to obtain the crystal sample meeting the requirements. The high-resistance p-type CdTe crystal of a relatively thick In film is irradiated with nanosecond laser pulses, the In film is used as an n-type doping source and as an electrode after laser irradiation.

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Melting Threshold and Thermal Conductivity of CdTe Under Pulsed Laser Irradiation

Veleschuk¹,

Gnatyuk²,

Aoki³

et al. 2020

Lecture Notes in Networks and Systems

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Laser-based technique of formation of CdTe — metal diode structures for high energy radiation detectors

Cited by 6 publications

References 9 publications

Effects of Heating on Electrical and Spectral Properties of In/CdTe/Au X- and γ-ray Detectors with a Schottky Barrier or Laser-induced p–n Junction

Effects of Heating on Electrical and Spectral Properties of In/CdTe/Au X- and γ-ray Detectors with a Schottky Barrier or Laser-induced p–n Junction

Modeling of diffusion motion of In nanoparticles in a CdTe crystal during laser-induced doping

Melting Threshold and Thermal Conductivity of CdTe Under Pulsed Laser Irradiation

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