For
decades, the V2VI3 compounds, specifically p-type
Bi2–x
Sb
x
Te3 and n-type Bi2Te3–x
Se
x
, have remained the cornerstone
of commercial thermoelectric solid-state cooling and power generation
near room temperature. However, a long-standing problem in V2VI3 thermoelectrics is that n-type Bi2Te3–x
Se
x
is
inferior in performance to p-type Bi2–x
Sb
x
Te3 near room temperature,
restricting the device efficiency. In this work, we developed high-performance
n-type Bi2–x
Sb
x
Te3, a composition long thought to only make
good p-type thermoelectrics, to replace the mainstream n-type Bi2Te3–x
Se
x
. The success arises from the synergy of the following mechanisms:
(i) the donorlike effect, which produces excessive conduction electrons
in Bi2Te3, is compensated by the antisite defects
regulated by Sb alloying; (ii) the conduction band degeneracy increases
from 2 for Bi2Te3 and Bi2Te3–x
Se
x
to 6 for
Bi2–x
Sb
x
Te3, favoring high Seebeck coefficients; and (iii) the
larger mass fluctuation yet smaller electronegativity difference and
smaller atomic radius difference between Bi and Sb effectively suppresses
the lattice thermal conductivity and retains decent carrier mobility.
A state-of-the-art zT of 1.0 near room temperature
was attained in hot deformed Bi1.5Sb0.5Te3, which is higher than those for most known n-type thermoelectric
materials, including commercial Bi2Te3–x
Se
x
ingots and the popular Mg3Sb2. Technically, building both the n-leg and p-leg
of a thermoelectric module using similar chemical compositions has
key advantages in the mechanical strength and the durability of devices.
These results attested to the promise of n-type Bi2–x
Sb
x
Te3 as
a replacement of the mainstream n-type Bi2Te3–x
Se
x
near room
temperature.