2022
DOI: 10.1007/s40820-022-00829-1
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Laser-Derived Interfacial Confinement Enables Planar Growth of 2D SnS2 on Graphene for High-Flux Electron/Ion Bridging in Sodium Storage

Abstract: Establishing covalent heterointerfaces with face-to-face contact is promising for advanced energy storage, while challenge remains on how to inhibit the anisotropic growth of nucleated crystals on the matrix. Herein, face-to-face covalent bridging in-between the 2D-nanosheets/graphene heterostructure is constructed by intentionally prebonding of laser-manufactured amorphous and metastable nanoparticles on graphene, where the amorphous nanoparticles were designed via the competitive oxidation of Sn-O and Sn-S b… Show more

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Cited by 18 publications
(6 citation statements)
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“…The result may be associated with the low carbonization or selenization temperature that is not high enough to promote the formation of CÀ Se-M covalent bonds, usually formed at high temperatures (above 700 °C) or long reaction time (above 12 h). [38][39][40][41] In the Se 3d spectrum, the peaks at 55.3/54.6 eV were identified as Se 3d 3/2 /Se 3d 5/2 , representing the FeÀ Se bond of FeSe. The peak at 58.2 eV may come from the SeÀ O bond.…”
Section: Resultsmentioning
confidence: 99%
“…The result may be associated with the low carbonization or selenization temperature that is not high enough to promote the formation of CÀ Se-M covalent bonds, usually formed at high temperatures (above 700 °C) or long reaction time (above 12 h). [38][39][40][41] In the Se 3d spectrum, the peaks at 55.3/54.6 eV were identified as Se 3d 3/2 /Se 3d 5/2 , representing the FeÀ Se bond of FeSe. The peak at 58.2 eV may come from the SeÀ O bond.…”
Section: Resultsmentioning
confidence: 99%
“…Furthermore, according to the equation i (V) = k 1 v + k 2 v 1/2 , the contribution ratios of capacitive-controlled (k 1 n) and diffusion-controlled (k 2 n 1/2 ) processes can be quantitatively analyzed. [76][77][78] For example, Fig. 4c depicts that the capacitive contribution (the red region) accounts for 91.5% of the total capacity at 0.8 mV s À1 .…”
Section: Resultsmentioning
confidence: 99%
“…Copyright 2022, reprinted with permission from Springer Nature. 52 (f) Ex situ HRTEM and SAED images of the FL-SnS 2 /RGO electrodes at the discharge process of no sodiation, 1.72 V, 1.69 V, and 0.01 V. Copyright 2017, reprinted with permission from American Chemical Society. 53 High-resolution TEM images tracking the sodium insertion in SnS 2 in real-time (g-m).…”
Section: Storage Mechanismmentioning
confidence: 99%
“…In situ Raman spectra of A-SnS 2 @G (d) and SnS 2 /G (e) at various discharge and charge depths. Copyright 2022, reprinted with permission from Springer Nature 52. (f) Ex situ HRTEM and SAED images of the FL-SnS 2 /RGO electrodes at the discharge process of no sodiation, 1.72 V, 1.69 V, and 0.01 V. Copyright 2017, reprinted with permission from American Chemical Society 53.…”
mentioning
confidence: 99%