Laser Desorption Ionisation Time‐of‐Flight Mass Spectrometry of Chalcogenide Glasses from (GeSe2)100−x(Sb2Se3)x System

Šútorová, Katarína; Prokeš, Lubomı́r; Nazabal, Virginie; Bouška, Marek; Havel, Josef; Němec, Petr

doi:10.1111/jace.13857

Cited by 8 publications

(4 citation statements)

References 20 publications

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“…are identical). 27 Contrary, the clusters originating from quaternary Ge-Sb-Se-Te thin films were mostly different from those generated from the ternary Ge-Sb-Te system. 32 For example, only three species are common (Ge + , Sb 2 Te + , and Sb 3 Te + ).…”

Section: La Tof-ms Of Ge-sb-se-te Thin Films With Different Se:te Ratiomentioning

confidence: 69%

“…When comparing the stoichiometry of the clusters obtained from Ge-Sb-Se-Te thin films to those observed from ternary Ge-Sb-Se glasses, 27 it was found that (i) A lower number of clusters is formed. Furthermore, for Te doped thin films, it is demonstrated that the formation of binary and ternary clusters is diminished.…”

Section: Discussionmentioning

confidence: 99%

“…The plasma plume, which is formed due to LA, contains many clusters which can be detected by time-of-flight mass spectrometry (TOF-MS). Indeed, this technique can be used to elucidate the composition of the structural fragments present in the plasma generated during the interaction of high-energy laser pulses with chalcogenide glasses 27 or amorphous thin films. 28 The aim of this paper is to evaluate the changes in amorphous Ge-Sb-Se-Te thin films when Se is partially replaced by Te by studying the chemistry of clusters formed by LA.…”

Section: Introductionmentioning

confidence: 99%

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Germanium‐antimony‐selenium‐tellurium thin films: Clusters formation by laser ablation and comparison with clusters from mixtures of elements

Huang,

Halenkovič,

Baillieul

et al. 2021

J Am Ceram Soc.

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Quaternary germanium-antimony-selenium-tellurium (Ge-Sb-Se-Te) thin films deposited from Ge 19.4 Sb 16.7 Se 63.9−x Te x (x = 5, 10, 15, and 20) glass-ceramics targets by radio frequency magnetron sputtering were studied using laser ablation quadrupole ion trap time of flight mass spectrometry. Binary, ternary, and quaternary Ge a Sb b Se c Te d clusters were formed and their stoichiometry was determined. By comparison of the clusters obtained from quaternary Ge-Sb-Se-Te thin films and those from ternary Ge-Sb-Te materials, we found that Ge-Te species are not detected from the quaternary system. Furthermore, Ge-Se and Se-Te species are missing in mass spectra generated from Ge-Sb-Se-Te thin films. From the Ge-Sb-Se-Te thin films, 16 clusters were detected while ternary Ge-Sb-Se glasses yielded 26 species. This might be considered as a signal of higher stability of Ge-Sb-Se-Te thin films which is increasing with a higher content of Te. The missing (Se 2 + , Ge a Sb + (a = 1-4), and GeSe c + (c = 1, 2)) and new (Ge + and Sb b Te + (b = 1-3)) clusters may indicate that some of the structural features of the films (Ge 2 Se 6/2 and Se 2 Sb-SbSe 2 ) were replaced by (GeSe 4−x Te x and SbSe 3−x Te x ) ones.In addition, when comparing the stoichiometry of clusters formed from Ge-Sb-Se-Te thin films with those from the mixtures of the elements, only Sb 3 + and SbSe + were observed in both cases. The knowledge gained concerning clusters stoichiometry contributes to the elucidation of the processes proceeding during plasma formation used for the chalcogenide thin films deposition.

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Section: La Tof-ms Of Ge-sb-se-te Thin Films With Different Se:te Ratiomentioning

confidence: 69%

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Germanium‐antimony‐selenium‐tellurium thin films: Clusters formation by laser ablation and comparison with clusters from mixtures of elements

Huang,

Halenkovič,

Baillieul

et al. 2021

J Am Ceram Soc.

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“…It has been shown that irradiation of amorphous chalcogenides – in their bulk as well as thin film forms – with a pulsed laser produces many clusters via laser ablation processes, as confirmed through time-of-flight mass spectrometry. This technique can be used to elucidate the structural fragments present in the plasma generated during the interaction of high energy laser pulses with chalcogenide glasses 25–27 . However, mass spectrometric study of Ge-Bi-Se materials has not yet been reported, and therefore it is carried out here.…”

Section: Introductionmentioning

confidence: 99%

Amorphous Ge-Bi-Se Thin Films: A Mass Spectrometric Study

Mawale

Mandal

Bouška

et al. 2019

Sci Rep

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The Ge-Bi-Se thin films of varied compositions (Ge content 0–32.1 at. %, Bi content 0–45.7 at. %, Se content 54.3–67.9 at. %) have been prepared by rf magnetron (co)-sputtering technique. The present study was undertaken in order to investigate the clusters generated during the interaction of laser pulses with Ge-Bi-Se thin films using laser ablation time-of-flight mass spectrometry. The stoichiometry of the clusters was determined in order to understand the individual species present in the plasma plume. Laser ablation of Ge-Bi-Se thin films accompanied by ionization produces about 20 positively and/or negatively charged unary, binary and ternary (Gex+, Biy+, Sez+/−, GexSez+/−, BiySez+/− and GexBiySez−) clusters. Furthermore, we performed the laser ablation experiments of Ge:Bi:Se elemental mixtures and the results were compared with laser ablation time-of-flight mass spectrometry analysis of thin films. Moreover, to understand the geometry of the generated clusters, we calculated structures of some selected binary and ternary clusters using density functional theory. The generated clusters and their calculated possible geometries can give important structural information, as well as help to understand the processes present in the plasma processes exploited for thin films deposition.

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Laser Desorption Ionization of As₂Ch₃ (Ch = S, Se, and Te) Chalcogenides Using Quadrupole Ion Trap Time-of-Flight Mass Spectrometry: A Comparative Study

Mawale

Ausekar

Prokeš

et al. 2017

J. Am. Soc. Mass Spectrom.

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Laser desorption ionization using time-of-flight mass spectrometer afforded with quadrupole ion trap was used to study AsCh (Ch = S, Se, and Te) bulk chalcogenide materials. The main goal of the study is the identification of species present in the plasma originating from the interaction of laser pulses with solid state material. The generated clusters in both positive and negative ion mode are identified as 10 unary (S and As ) and 34 binary (As S ) species for AsS glass, 2 unary (Se ) and 26 binary (As Se ) species for AsSe glass, 7 unary (Te ) and 23 binary (As Te ) species for AsTe material. The fragmentation of chalcogenide materials was diminished using some polymers and in this way 45 new, higher mass clusters have been detected. This novel approach opens a new possibility for laser desorption ionization mass spectrometry analysis of chalcogenides as well as other materials. Graphical abstract ᅟ.

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Laser Desorption Ionisation Time‐of‐Flight Mass Spectrometry of Chalcogenide Glasses from (GeSe₂)_100−x(Sb₂Se₃)_x System

Cited by 8 publications

References 20 publications

Germanium‐antimony‐selenium‐tellurium thin films: Clusters formation by laser ablation and comparison with clusters from mixtures of elements

Germanium‐antimony‐selenium‐tellurium thin films: Clusters formation by laser ablation and comparison with clusters from mixtures of elements

Amorphous Ge-Bi-Se Thin Films: A Mass Spectrometric Study

Laser Desorption Ionization of As₂Ch₃ (Ch = S, Se, and Te) Chalcogenides Using Quadrupole Ion Trap Time-of-Flight Mass Spectrometry: A Comparative Study

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Laser Desorption Ionisation Time‐of‐Flight Mass Spectrometry of Chalcogenide Glasses from (GeSe2)100−x(Sb2Se3)x System

Cited by 8 publications

References 20 publications

Germanium‐antimony‐selenium‐tellurium thin films: Clusters formation by laser ablation and comparison with clusters from mixtures of elements

Germanium‐antimony‐selenium‐tellurium thin films: Clusters formation by laser ablation and comparison with clusters from mixtures of elements

Amorphous Ge-Bi-Se Thin Films: A Mass Spectrometric Study

Laser Desorption Ionization of As2Ch3 (Ch = S, Se, and Te) Chalcogenides Using Quadrupole Ion Trap Time-of-Flight Mass Spectrometry: A Comparative Study

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Laser Desorption Ionisation Time‐of‐Flight Mass Spectrometry of Chalcogenide Glasses from (GeSe₂)_100−x(Sb₂Se₃)_x System

Laser Desorption Ionization of As₂Ch₃ (Ch = S, Se, and Te) Chalcogenides Using Quadrupole Ion Trap Time-of-Flight Mass Spectrometry: A Comparative Study