Laser-Diffused P Emitters for Ge TPV Cells

Jiménez, Antonio; Datas, Alejandro; Canteli, D.; Muñoz-Martín, D.; Morales, M.; Molpeceres, C.; Canzo, C. Del

doi:10.1109/cde.2018.8597048

Cited by 1 publication

(1 citation statement)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Another alternative with a higher degree of development is Ge doping by rapid thermal annealing (RTA) of Spin-On Dopant (SoD) sources [22][23][24][25]. However, very few studies have considered the possibility of using pulsed laser melting (PLM) instead of RTA [26,27], which is a very efficient way to reduce thermal budget to reduce bulk contamination [28], and also facilitates the fabrication of point contacts avoiding the heating of all substrate. Besides, many of these studies do not take into consideration important aspects such as crystalline quality, mobility of electron/holes or percentage of activation of the introduced dopants.…”

Section: Introductionmentioning

confidence: 99%

N-type doping of Ge by P spin on dopant and pulsed laser melting

Jiménez

Carturan

Milazzo

et al. 2020

Semicond. Sci. Technol.

View full text Add to dashboard Cite

N-type doping of Ge based on spin on dopant sources and pulsed laser melting has been proposed as an alternative to the use of complex and expensive techniques such as ionimplantation or molecular beam epitaxy. Optimization of the n+/p junction has been carried out with a KrF laser (of 22 ns pulse duration) by studying the effect of different laser fluences and the number of pulses. The diffusion profiles, sheet resistance, carrier density and mobility have been determined by secondary ion mass spectrometry and Van der Pauw-Hall measurements. By properly selecting the range of laser energy density and number of pulses, a high level of activation (>10 19 cm −3 ) with good mobility (350-450 cm 2 V −1 s −1 ) and low sheet resistance (<50 Ω/,) has been achieved. In addition, the good crystalline quality of the samples has been confirmed by high-resolution x-ray diffraction measurements, demonstrating the viability of such a low-cost manufacturing process for next generation Ge-based devices.

show abstract