An ab initio investigation of the chemical
vapor deposition of AlN from the AlCl3NH3
adduct is presented.
Geometries, harmonic vibrational frequencies and relative energies
for the AlCl3NH3 adduct, its dissociation
products
AlCl
n
, NH
n
(n
= 1−3), and ring and cluster compounds
[(Cl2AlNH2)
n
(n = 1, 2), (ClAlNH)
n
(n
= 1, 2, 3, 4, 6)] are
discussed. The Al−N bond lengths in the investigated compounds
are strongly dependent on the coordination numbers
of the aluminum and nitrogen centers, decreasing from 2.0 Å for
4-coordinated Al/N centers to 1.79 and 1.68 Å for
3- and 2-coordinated Al/N centers, respectively. Thermodynamic
analysis shows that dissociation of
Cl
x
AlNH
x
(x
= 2, 3) compounds with elimination of HCl and simultaneous formation
of oligomeric forms is preferable to the
process of dissociation into components or simple HCl detachment.
Under standard conditions gaseous 4-coordinated
Al/N compounds (ClAlNH)6 and (ClAlNH)4 are more
stable than 3-coordinated (ClAlNH)2 and
(ClAlNH)3 compounds.
In 4-membered rings and clusters, the electrostatic repulsion
between nearby Al−Al and N−N atoms makes
reorganization to 6-membered rings extremely favorable. The
suggested mechanism of AlN deposition involving
cluster formation in the gas phase is discussed.