Laser-induced color centers in crystals

Gao, Si; Duan, Yan-Zhao; Tian, Zhen‐Nan; Zhang, Yong‐Lai; Chen, Qi‐Dai; Gao, Bing‐Rong; Sun, Hong‐Bo

doi:10.1016/j.optlastec.2021.107527

Cited by 22 publications

(10 citation statements)

References 163 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Both long-and the short-wavelength radiation may create various defects in the crystal lattice of insulators [33] (similar effects are reported also in wide-gap semiconductors [34]) resulting in irreversible changes of illuminated surfaces. In CaF 2 , the formation of defects leading to surface metallization was induced by nanosecond pulses of 193-nm [35] and 157-nm [36] excimer laser radiation.…”

Section: Discussion and Outlookmentioning

confidence: 52%

“…It is clearly visible that the periodic nanostructures observed in the XUV-CDL irradiation experiment differ from the morphology of all the damage patterns observed on alkali-earth-halide surfaces exposed to radiation of various kinds in numerous studies reported earlier [26][27][28][29][30][31][32][33][34][35][36][37][38][39]. We should keep in mind that an attenuation length of 46.9-nm XUV-CDL radiation in BaF 2 is very short, i.e., only about 10 nm [40,41].…”

Section: Discussion and Outlookmentioning

confidence: 90%

See 1 more Smart Citation

Characterizing the Grating-like Nanostructures Formed on BaF2 Surfaces Exposed to Extreme Ultraviolet Laser Radiation

et al. 2022

View full text Add to dashboard Cite

Monocrystalline barium fluoride (BaF2) slab targets were irradiated by focused 46.9-nm laser radiation at various fluence levels above the ablation threshold. Well-developed ablation patterns with sharp edges were studied by AFM (atomic force microscopy). Their inner surfaces were uniformly covered by periodic structures. The spatial period of the ripples depends on the laser fluence. When the sample is rotated by 45°, the orientation of the grating-like structure changes accordingly. Thus, the grating vector of the periodic structure seems to be coupled to the crystallographic planes of the single crystal. This means that the XUV-laser induced ripples reported here differ from LIPSS (laser-induced periodic surface structures) associated with interference phenomena occurring on illuminated surfaces. Therefore, other mechanisms are discussed to explain the formation of the periodic nanostructures reported in this article.

show abstract

Section: Discussion and Outlookmentioning

confidence: 52%

Section: Discussion and Outlookmentioning

confidence: 90%

Characterizing the Grating-like Nanostructures Formed on BaF2 Surfaces Exposed to Extreme Ultraviolet Laser Radiation

et al. 2022

View full text Add to dashboard Cite

show abstract

“…The principle of the femtosecond laser method shown in Figure 10a is that electron beam, generated by ionizing the air due to the strong electric field formed by the propagation of the femtosecond laser, can lead to the generation of vacancies in diamond. After annealing process, the produced vacancies can combine with nitrogen atoms to form NV defects [53]. Compared with ion implantation, the NV defect generated by femtosecond laser irradiation method possesses a narrower optical linewidth and a longer decoherence time.…”

Section: Femtosecond Laser Irradiation Methodsmentioning

confidence: 99%

Growth of Diamond Thin Film and Creation of NV Centers

Ma¹,

Chen²,

Wang³

2023

Applications and Use of Diamond

View full text Add to dashboard Cite

Nitrogen-vacancy (NV) center is one type of special defects in diamonds. NV center not only can be used as sensors for temperature, stress detection, magnetic field, etc., but also has potential applications for quantum computing due to its unique physical properties. Therefore, the growth of diamond and creation of NV centers are significant for the future technologies. In this chapter, some methods for growing diamond thin film are introduced first, including traditional high-pressure-high-temperature (HPHT) and chemical vapor deposition (CVD) methods. The second part will focus on the current commonly used approaches to create NV centers. Inter-growth and post-growth processes are mainly utilized for the creation of NV centers during and after the growth of thin film, respectively.

show abstract

“…Creating a SiC heteropolytypic sandwich in which one polytype is narrowly confined between layers of a second polytype (figure 4(a)) provides an avenue to localize defects within specific polytypic layers. The depth of defects created through irradiation, ion bombardment, or direct laser writing methods [161,[185][186][187] could be immediately determined based on each polytype's unique spectral emission lines (table 1) and other spin properties. This polytypic tagging allows for screening of desired defects (i.e., those at a specific depth or within a specified polytype) for further study.…”

Section: Defect Engineering and Localizationmentioning

confidence: 99%

Designing silicon carbide heterostructures for quantum information science: challenges and opportunities

Harmon

Delegan

Highland

et al. 2022

Mater. Quantum. Technol.

View full text Add to dashboard Cite

Silicon carbide (SiC) can be synthesized in a number of different structural forms known as polytypes with a vast array of optically active point defects of interest for quantum information sciences. The ability to control and vary the polytypes during SiC synthesis may offer a powerful methodology for the formation of new material architectures that expand our ability to manipulate these defects, including extending coherence lifetimes and enhancing room temperature operation. Polytypic control during synthesis presents a significant challenge given the extreme conditions under which SiC is typically grown and the number of factors that can influence polytype selection. In situ monitoring of the synthesis process could significantly expand our ability to formulate novel polytype structures. In this perspective, we outline the state of the art and ongoing challenges for precision synthesis in SiC. We discuss available in situ x-ray characterization methods that will be instrumental in understanding the atomic scale growth of SiC and defect formation mechanisms. We highlight optimistic use cases for SiC heterostructures that will become possible with in situ polytypic control and end by discussing extended opportunities for integration of ultrahigh quality SiC materials with other semiconductor and quantum materials.

show abstract

Laser-induced color centers in crystals

Cited by 22 publications

References 163 publications

Characterizing the Grating-like Nanostructures Formed on BaF2 Surfaces Exposed to Extreme Ultraviolet Laser Radiation

Characterizing the Grating-like Nanostructures Formed on BaF2 Surfaces Exposed to Extreme Ultraviolet Laser Radiation

Growth of Diamond Thin Film and Creation of NV Centers

Designing silicon carbide heterostructures for quantum information science: challenges and opportunities

Contact Info

Product

Resources

About