Laser-induced crystallization of silicon islands on amorphous substrates: Multilayer structures

Biegelsen, D. K.; Johnson, N. M.; Bartelink, D. J.; Moyer, M. D.

doi:10.1063/1.92282

Cited by 84 publications

(9 citation statements)

References 3 publications

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“…For the capacitors shown in Fig. 8 this effect is not readily measurable, as might be expected for the grain size in the 5-10 pm range [11]. From the relatively constant value of the flat-band voltage of these devices with laser power, it appears that the top interface is fairly similar to bulk crystalline material, although there is a larger fixed charge density of 4x10 1 1 cm" 2 for these particular samples.…”

Section: Experimental Characteristics Of Laser-recrystallized Poly-simentioning

confidence: 90%

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Potential Applications of Poly-Silicon as an Electronic-Device Material

Bartelink

1981

MRS Proc.

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Poly-crystalline silicon can be regarded as a true electronic material if good p-n junctions can be made in it or if its state of depletion can be altered by reasonable gate voltages. The degree of perfection with which it must exhibit these electronic-material properties depends on whether the application is as a technology in VLSI (or other bulk-Si substrate use) where devices with bulk-crystalline properties are available or as the principal active material in Large Area Integration (LAI), such as flat-panel displayaddressing circuits, where the competition is much less demanding. The three main detrimental effects of grain boundaries on electronic-device function are the action of grain boundary traps as (1) extra charge centers, (2) lifetime killers, and (3) mobility-reducing scattering centers. The current trend in reducing or almost eliminating grain boundaries by laser recrystallization or lateral epitaxy has the effect of reducing the average number of traps. In terms of potential applications of the material, the improvement derived from these procedures must be balanced against other contraints placed on the overall structure. For example, the thickness and quality of the lower oxide (and interface) in these processes will determine whether an electronically active lower gate function is practical. Some currently envisioned applications include load devices in inverters either as resistors or as depletion transistors, common-gate staked CMOS structures, dual-channel MOSFET's, and other "vertical VLSI" applications. The systems-level topological advantages of stacked structures and the circuit-performance improvement provided by the ground plane in dielectrically isolated devices must also be balanced against the extra cost and yield loss of additional masking level complexity and design complication.

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Section: Experimental Characteristics Of Laser-recrystallized Poly-simentioning

confidence: 90%

“…Fundamental to the operation of silicon-nitride cap in place [11] and the Vg ( Vo ts) 1000A oxide was grown in a conventional dry-wet-dry cycle at Fig. 8.…”

Section: Experimental Characteristics Of Laser-recrystallized Poly-simentioning

confidence: 99%

Potential Applications of Poly-Silicon as an Electronic-Device Material

Bartelink

1981

MRS Proc.

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“…In fact, the polycrystalline silicon transistor industry relies on laser annealing techniques. Knowledge accumulated in the past with continuous wave lasers such as crystallization of a patterned semiconductor layer [25], the use of a patterned anti-reflection layer [26], and a heat-sink structure [27] might be applicable for efficient and precise temperature control of organic films. In the late 80s and 90s, the history of laser crystallization repeated itself with an excimer laser [28] with a twist of an interference of laser light [29].…”

Section: Disucussionmentioning

confidence: 99%

Lateral solidification of a liquid crystalline semiconductor film induced by temperature gradient

et al. 2013

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Derivatives of [1]benzothieno[3,2-b]benzothiophene (BTBT) are attracting much attention as a highly soluble, highmobility semiconductor material for thin-film transistor applications. These small molecules are known to organize themselves into a single crystalline structure after spin coating or drop casting. Charge transport in a single crystal material is anisotropic in nature. Hence, it is desired to control its orientation during growth or recrystallization so that the source and drain electrodes of a transistor are to be placed along a faster transport direction. We propose to generate temperature gradient in a heated liquid crystalline thin film to induce lateral recrystallization. In experiment, we tried two methods. First, an aluminum plate with two narrow ridges was inserted between a temperature-controlled stage and a square silicon substrate with a 200nm-thick SiO 2 and a spin-coated C 8 -BTBT film. We raised the temperature of the stage to C 120 o and let it cool gradually. During cooling at around C 105 o , the color of the sample started to change, indicating a phase change. This change proceeded from the corners of the film and in about 30 seconds, darker regions merged at the center of the substrate. Second, the sample was placed at the edge of the stage. In this case, the color change started from the protruding corner of the sample and proceeded toward the other end. Micrograph observation revealed that cracks were formed in these films and they were perpendicular to the direction of the phase change.

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“…HIN semiconductor layers with properties approaching bulk crystalline material can be formed by laser-recrystallized large-grain Si [ l ] , seeded lateral epitaxy [2] , or spontaneous island crystallization [3] . Innovative active-device structures have been proposed' for this materials system [4] , but these devices have operated as conventional transistors.…”

Section: The Transpacitor a Novel Three-terminal Apacitor Switching mentioning

confidence: 99%

The transpacitor, a novel three-terminal MOS-capacitor switching device

Bartelink

1982

IEEE Electron Device Lett.

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Laser-induced crystallization of silicon islands on amorphous substrates: Multilayer structures

Cited by 84 publications

References 3 publications

Potential Applications of Poly-Silicon as an Electronic-Device Material

Potential Applications of Poly-Silicon as an Electronic-Device Material

Lateral solidification of a liquid crystalline semiconductor film induced by temperature gradient

The transpacitor, a novel three-terminal MOS-capacitor switching device

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