2013
DOI: 10.1039/c3tc30714j
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Laser-induced doping and fine patterning of massively prepared luminescent ZnS nanospheres

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Cited by 5 publications
(5 citation statements)
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“…The applications of nontoxic ZnS in some fields, such as solar cells, bioimaging, sensors and optoelectronics, are limited due to the wide-band gap energy (3.6 and 3.8 eV for the zinc blende and wurtzite structures, respectively). Doping is a successful strategy to overcome this limitation since it introduces intermediate-energy levels in the band gap region [1][2][3][4]. Therefore, new electronic transitions and de-excitation paths between excited and ground states are possible and allow obtaining multiple wavelength emissions in the visible from a single excitation source [5].…”
Section: Introductionmentioning
confidence: 99%
“…The applications of nontoxic ZnS in some fields, such as solar cells, bioimaging, sensors and optoelectronics, are limited due to the wide-band gap energy (3.6 and 3.8 eV for the zinc blende and wurtzite structures, respectively). Doping is a successful strategy to overcome this limitation since it introduces intermediate-energy levels in the band gap region [1][2][3][4]. Therefore, new electronic transitions and de-excitation paths between excited and ground states are possible and allow obtaining multiple wavelength emissions in the visible from a single excitation source [5].…”
Section: Introductionmentioning
confidence: 99%
“…The interest in ZnS NPs has increase mainly because of their unique properties and enormous potential in emerging technologies ranging from optoelectronic luminescent devices to photocatalysis [1][2][3][4][5][6][7][8]. It is known that bulk ZnS is an important binary semiconductor with a direct, wide bandgap (~3.6 eV), high refraction index, and high transmittance in the visible range [9,10].…”
Section: Introductionmentioning
confidence: 99%
“…[25][26][27] Zinc sulfide (group II-VI semiconductor with direct wide band gap) nanoparticles have recently attracted significant attention because of their applications in biology and optoelectronic devices. [28][29][30][31][32] In general, the synthesis temperature has a significant effect on the crystal growth, structure and optical properties of the QDs. These studies suggest that the ideal growth temperature should be high enough to overcome the energy barrier for nucleation and growth, and low enough to result in a surface reconstruction leading to optimization of properties.…”
Section: Introductionmentioning
confidence: 99%
“…Zinc sulfide (group II-VI semiconductor, direct wide band gap) nanoparticles have recently attracted significant attention because of their applications in biology and optoelectronic devices [28][29][30][31][32]. In general, the synthesis temperature has a significant effect on the crystal growth, structure and optical properties of the QDs.…”
Section: Introductionmentioning
confidence: 99%