Laser-induced fast etching and metallization of SiC ceramics

Dolgaev, Sergei I; Voronov, V. V.; Шафеев, Г. А.; Ammar, C. Fauquet‐Ben; Themlin, J.‐M.; Cros, A.; Marine, W.

doi:10.1016/s0169-4332(96)00634-4

Cited by 22 publications

(2 citation statements)

References 9 publications

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“…The water dissociation by laser irradiation is previously proposed in several articles. 45,51,52,60 The formation of oxides on the target surface [53][54][55][56][57][58] or in plasma 59 has been reported during laser ablation of solids in water, which indicates that water molecules are dissociated to provide reactive oxygen species for chemical subsequent reactions. Shafeev et al 52 assumed the product of dissociation of water in a diamond-etching mechanism and in (CH 3 ) 2 SO participation of hydrogen.…”

Section: Resultsmentioning

confidence: 99%

Effect of Laser Wavelength at IR (1064 nm) and UV (193 nm) on the Structural Formation of Palladium Nanoparticles in Deionized Water

et al. 2011

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In this work, Pd nanoparticles were synthesized by pulsed nanosecond laser ablation in deionized water using Q-switched Nd:YAG and ArF excimer lasers, independently. The aim is to investigate the wavelength dependence of nanoparticle formation mechanisms using IR and UV laser irradiations. Pd nanoparticles fabricated by a Q-switched Nd:YAG laser show a perfect spherical morphology, whereas those due to the ArF excimer laser undergo fragmental shapes. Furthermore, the production rate of Pd nanoparticles generated at IR is noticeably greater than that at UV wavelength. Moreover, the plasma temperature induced by the Nd:YAG laser is higher than that generated by the ArF laser mainly due to the stronger inverse Bremsstrahlung process at the IR region. It was shown that the ArF laser fabricates palladium oxide structure with much higher rate with respect to the Nd:YAG laser.

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Section: Resultsmentioning

confidence: 99%

Effect of Laser Wavelength at IR (1064 nm) and UV (193 nm) on the Structural Formation of Palladium Nanoparticles in Deionized Water

et al. 2011

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“…Lasers have been investigated as tools for both additive (annealing, deposition, surface alteration, and doping) and subtractive (ablation) SiC processing since the early 1980s; however, they have not been widely adopted for microelectronics and MEMS applications. Various types of lasers have been tested for microfabrication on silicon carbide, including traditional excimer, Nd:yttrium aluminum (Nd:YAG), and CO 2 lasers [79][80][81][82][83][84], as well as more recent lasers such as N 2 [85], Ar + [86], Cu vapor [87], and promising picoseconds [88] and femtosecond lasers [89,90].…”

Section: Silicon Carbide Laser Annealingmentioning

confidence: 99%

Silicon and Silicon Carbide Recrystallization by Laser Annealing: A Review

Arduino,

Stassi,

Spano

et al. 2023

Materials

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Modifying material properties within a specific spatial region is a pivotal stage in the fabrication of microelectronic devices. Laser annealing emerges as a compelling technology, offering precise control over the crystalline structure of semiconductor materials and facilitating the activation of doping ions in localized regions. This obviates the necessity for annealing the entire wafer or device. The objective of this review is to comprehensively investigate laser annealing processes specifically targeting the crystallization of amorphous silicon (Si) and silicon carbide (SiC) samples. Silicon finds extensive use in diverse applications, including microelectronics and solar cells, while SiC serves as a crucial material for developing components designed to operate in challenging environments or high-power integrated devices. The review commences with an exploration of the underlying theory and fundamentals of laser annealing techniques. It then delves into an analysis of the most pertinent studies focused on the crystallization of these two semiconductor materials.

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