There
is an urgent demand to improve the efficiency and the color purity
of the environment-friendly quantum dots (QDs), which can be used
in wide color gamut (WCG) displays. In this study, we optimized the
reaction conditions for the InP core synthesis and the ZnSe/ZnS multishell
growth on the core. As a result, remarkable improvements were achieved
in the photoluminescence quantum yield (PL QY, 95%) and the full width
at half-maximum (fwhm, 36 nm), with perfectly matched wavelength (528
nm) for the green color in WCG displays. Injection of the phosphorus
precursor at a mild temperature during the InP core synthesis reduced
the size distribution of the core to 12%, and the shell growth performed
at a high temperature significantly enhanced the crystallinity of
the thick passivating layer. We also investigated the photophysical
properties, particularly the energy trap distributions and trap state
emissions of the InP-based QDs with different shell structures. The
time-resolved and temperature-dependent PL spectra clearly indicated
that the well-passivated InP/ZnSe/ZnS QDs showed nearly trap-free
emissions over a wide temperature range (77–297 K). Also, the
on- and off-time probability on single QD blinking and Auger ionization
efficiencies also showed that these QDs were hardly affected by the
surface traps.