In ICF research, CsI is the preferred material for photocathodes in X-ray streak cameras due to its excellent properties, but the deliquescence of CsI photocathodes in air significantly reduces the quantum yield. In this paper, CsI photocathodes were prepared, and the morphology of fresh and deliquescent CsI photocathodes was measured by SPM and XRD, which showed that the thickness of CsI crystals increased, and the surface of CsI crystals changed from polycrystalline to crystalline and became sparse. The mechanism of deliquescence affecting the quantum yield of CsI photocathode is analyzed. It is proposed that the surface morphology and crystalline state changes of the CsI photocathode lead to longer photoelectron transport paths and reduced photoemission areas, which are important factors in the attenuation of the CsI photocathode.