2009
DOI: 10.1166/jnn.2009.1191
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Laser Induced Semiconductor-Metal Transition in a Quantum Well

Abstract: The possibility of Semiconductor-Metal Transition under the influence of intense Laser field in a quasi-two dimensional semiconducting system like Al(x)Ga(1-x)As/GaAs Quantum Well in the finite barrier model has been investigated by showing an abrupt change in diamagnetic susceptibility of donor at critical concentration, which can be controlled by the amplitude of Laser field, using variational principle.

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Cited by 5 publications
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“…Diamagnetic susceptibility (χ dia ) of a shallow and a laser dressed donor in a quantum well and its pressure dependence has been studied by many experts [21][22][23]. Chance for the possibility of SMT in low dimensional systems has been proved both experimentally [24] and theoretically through χ dia in a quantum well [25,26]. Effect of magnetic field on susceptibility of donor in quantum dot [27] and quantum wires [28] has already been observed.…”
Section: Introductionmentioning
confidence: 99%
“…Diamagnetic susceptibility (χ dia ) of a shallow and a laser dressed donor in a quantum well and its pressure dependence has been studied by many experts [21][22][23]. Chance for the possibility of SMT in low dimensional systems has been proved both experimentally [24] and theoretically through χ dia in a quantum well [25,26]. Effect of magnetic field on susceptibility of donor in quantum dot [27] and quantum wires [28] has already been observed.…”
Section: Introductionmentioning
confidence: 99%