Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate

Liebich, S.; Zimprich, M.; Beyer, Andreas; Lange, Christoph; Franzbach, D. J.; Chatterjee, Sangam; Hossain, Nadir; Sweeney, S. J.; Volz, Kerstin; Kunert, B.; Stolz, W.

doi:10.1063/1.3624927

Cited by 141 publications

(66 citation statements)

References 15 publications

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“…III/V), for example the material system Ga(N, As, P). 2 These materials are usually produced by metal organic vapor phase epitaxy (MOVPE), a method that deposits liquid-state precursor molecules on heated surfaces via chemical vapor deposition. 3 The structure of the final thin-film and thus the properties of the resulting device are crucially determined by the chemical reactions in the nucleation phase of the deposition process.…”

Section: Introductionmentioning

confidence: 99%

Extent of hydrogen coverage of Si(001) under chemical vapor deposition conditions from ab initio approaches

Rosenow

Tonner

2016

The Journal of Chemical Physics

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The extent of hydrogen coverage of the Si(001)c(4x2) surface in the presence of hydrogen gas has been studied with dispersion corrected density functional theory. Electronic energy contributions are well described using a hybrid functional. The temperature dependence of the coverage in thermodynamic equilibrium was studied computing the phonon spectrum in a supercell approach.As an approximation to these demanding computations, an interpolated phonon approach was found to give comparable accuracy. The simpler ab initio thermodynamic approach is not accurate enough for the system studied, even if corrections by the Einstein model for surface vibrations are considered. The on-set of H2 desorption from the fully hydrogenated surface is predicted to occur at temperatures around 750 K. Strong changes in hydrogen coverage are found between 1000 and 1200 K in good agreement with previous reflectance anisotropy spectroscopy experiments. These findings allow a rational choice for the surface state in the computational treatment of chemical reactions under typical metal organic vapor phase epitaxy conditions on Si(001). KeywordsDensity functional theory; metal organic vapor phase epitaxy; semiconductor; ab initio thermodynamics; silicon; surface state a) Author to whom correspondance should be adressed. Electronic

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Section: Introductionmentioning

confidence: 99%

Extent of hydrogen coverage of Si(001) under chemical vapor deposition conditions from ab initio approaches

Rosenow

Tonner

2016

The Journal of Chemical Physics

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“…Following the successful demonstration of devices grown on GaP substrates, devices were grown on Si, with the first reports of a monolithically integrated III-V laser on Si being reported in 2011 by the Marburg group [53]. Electrical injection lasing took place up to a maximum temperature of 165 K with a threshold current density of 1.6 kAcm −2 at a wavelength of 861 nm [54] as shown in Fig.…”

Section: Direct Growth Of Iii-v Active Regions On Siliconmentioning

confidence: 99%

Physical Properties and Characteristics of III-V Lasers on Silicon

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Marko

Hossain

et al. 2015

IEEE J. Select. Topics Quantum Electron.

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Abstract-The development of laser technology based on silicon continues to be of key importance for the advancement of electronic-photonic integration offering the potential for high data rates and reduced energy consumption. Progress was initially hindered due to the inherent indirect band gap of silicon. However, there has been considerable progress in developing ways of incorporating high gain III-V based direct band gap materials onto silicon, bringing about the advantages of both materials. In this paper, we introduce the need for lasers on silicon and review some of the main approaches for the integration of III-V active regions, including direct epitaxial growth, hybrid integration, defect blocking layers and quantum dots. We then discuss the roles of different carrier recombination processes on the performance of devices formed using both wafer fusion and direct epitaxial approaches.

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“…Another important area of attention for the lattice-matched III-V solar cells on Si would be the development of tunnel junction with abrupt interfaces and doping profiles and low series resistance, especially for CPV operation. Recent advancements in dilute nitride materials, GaAsPN/GaPN multiple quantum-well (MQW) structures, extensive research on GaP-on-Si epitaxy and the progress in lattice-matched GaNAsP based lasers on Si (Liebich et al 2011) present an exciting opportunity to further advance the research on III-V-N based latticematched materials on Si for solar cell integration.…”

Section: Lattice-matched Iii-v-n Materials On Simentioning

confidence: 99%

III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook

Jain

Hudait

2014

Energy Harvesting and Systems

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Achieving high-efficiency solar cells and at the same time driving down the cell cost has been among the key objectives for photovoltaic researchers to attain a lower levelized cost of energy (LCOE). While the performance of silicon (Si) based solar cells have almost saturated at an efficiency of~25%, III-V compound semiconductor based solar cells have steadily shown performance improvement at~1% (absolute) increase per year, with a recent record efficiency of 44.7%. Integration of such high-efficiency III-V multijunction solar cells on significantly cheaper and large area Si substrate has recently attracted immense interest to address the future LCOE roadmaps by unifying the high-efficiency merits of III-V materials with low-cost and abundance of Si. This review article will discuss the current progress in the development of III-V multijunction solar cell integration onto Si substrate. The current state-of-the-art for III-Von-Si solar cells along with their theoretical performance projections is presented. Next, the key design criteria and the technical challenges associated with the integration of III-V multijunction solar cells on Si are reviewed. Different technological routes for integrating III-V solar cells on Si substrate through heteroepitaxial integration and via mechanical stacking approach are presented. The key merits and technical challenges for all of the till-date available technologies are summarized. Finally, the prospects, opportunities and future outlook toward further advancing the performance of III-V-on-Si multijunction solar cells are discussed. With the plummeting price of Si solar cells accompanied with the tremendous headroom available for improving the III-V solar cell efficiencies, the future prospects for successful integration of III-V solar cell technology onto Si substrate look very promising to unlock an era of next generation of high-efficiency and low-cost photovoltaics.

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Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate

Cited by 141 publications

References 15 publications

Extent of hydrogen coverage of Si(001) under chemical vapor deposition conditions from ab initio approaches

Extent of hydrogen coverage of Si(001) under chemical vapor deposition conditions from ab initio approaches

Physical Properties and Characteristics of III-V Lasers on Silicon

III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook

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