Laser operation of Nd:LaF
            <sub>3</sub>
            thin film grownby molecular beam epitaxy

Daran, Emmanuelle; Shepherd, D.P.; Bhutta, T.; Serrano, C. M.

doi:10.1049/el:19990303

Cited by 34 publications

(24 citation statements)

References 4 publications

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“…The intercept on the axis is related to the level of losses in the cavity, other than the output coupling, which we assume to be only due to propagation losses in the waveguide. The data for this channel suggest a propagation loss of 1 dB/cm, which is consistent with the value obtained for the planar thin film prior to ion beam milling [12].…”

Section: Channel-waveguide Laser Performancesupporting

confidence: 87%

“…LaF [12]. The Raman spectrum of the LaF waveguides shows a maximum phonon energy of just 380 cm , in good agreement with reported values for bulk crystals [13].…”

Section: Introductionsupporting

confidence: 89%

“…By changing the output mirror to one with a transmission of 23% (at the laser wavelength), the threshold rose to 103 mW and with this output coupling we obtained a laser output power of 28 mW (for the available 440 mW of absorbed pump power) and a slope efficiency of 11%. These results were the subject of a previous publication, and the reader is referred to Daran et al [12] for further details. The variation of the laser threshold with different output couplers can be used to estimate the optical losses of lasers by the Findlay-Clay method [27].…”

Section: Thin-film Fabrication and Characterizationmentioning

confidence: 77%

“…We believe this damage, combined with nonoptimized launching optics (see later discussion of the BCB channels) led to the low observed output power of just 5 mW when using a 23% output coupler and 300 mW of incident power. Nevertheless, despite the nonoptimized nature of the fabrication procedure and the use of launching optics not matched to the asymmetric mode profile of the channels, we have already obtained a large reduction ( 5) in the incident power required to reach threshold compared to the thin film waveguide [12]. The results obtained for the 8-m channel also show that we have been able to introduce lateral confinement with negligible additional propagation loss.…”

Section: Channel-waveguide Laser Performancementioning

confidence: 82%

“…The variation of the laser threshold with different output couplers can be used to estimate the optical losses of lasers by the Findlay-Clay method [27]. For our planar thin film this gave a value for the losses at 1.064 m of 1.2 dB/cm [12]. …”

Section: Thin-film Fabrication and Characterizationmentioning

confidence: 98%

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Low phonon energy, Nd:LaF/sub 3/ channel waveguide lasers fabricated by molecular beam epitaxy

Bhutta

Chardon

Shepherd

et al. 2001

IEEE J. Quantum Electron.

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Abstract-We report the first fabrication and laser operation of channel waveguides based on LaF 3 planar thin films grown by molecular beam epitaxy. To our knowledge, this is the lowest phonon energy dielectric material to have shown guided-wave laser operation to date. A full characterization, in terms of spectroscopy, laser results, and propagation losses, is given for the planar thin films upon which the channel waveguides are based. Two channel-fabrication methods are then described, the first involves ion milling and the second takes the novel approach of using a photo-definable polymer overlay. Laser operation in Nd-doped samples is demonstrated at 1.06, 1.05, and 1.3 m, and the potential for mid-infrared laser sources based on such guides is discussed.

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Section: Channel-waveguide Laser Performancesupporting

confidence: 87%

“…LaF [12]. The Raman spectrum of the LaF waveguides shows a maximum phonon energy of just 380 cm , in good agreement with reported values for bulk crystals [13].…”

Section: Introductionsupporting

confidence: 89%

Section: Thin-film Fabrication and Characterizationmentioning

confidence: 77%

Section: Channel-waveguide Laser Performancementioning

confidence: 82%

Section: Thin-film Fabrication and Characterizationmentioning

confidence: 98%

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Low phonon energy, Nd:LaF/sub 3/ channel waveguide lasers fabricated by molecular beam epitaxy

Bhutta

Chardon

Shepherd

et al. 2001

IEEE J. Quantum Electron.

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Atomic Layer Deposition of LaF₃ Thin Films using La(thd)₃ and TiF₄ as Precursors

Pilvi

Puukilainen

Arstila

et al. 2008

Chemical Vapor Deposition

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Lanthanum fluoride is a vacuum ultraviolet (VUV) transparent material which is widely used in optical applications. An atomic layer deposition (ALD) process is developed for depositing lanthanum fluoride thin films for the first time. LaF 3 films are grown at 225-350 -C using La(thd) 3 and TiF 4 as precursors. The crystallinity, morphology, composition, thicknesses, and refractive indices of the films are analyzed by X-ray diffraction/reflection (XRD/XRR), atomic force microscopy (AFM), scanning electron microscopy (SEM), time-of-flight elastic recoil detection analysis (TOF-ERDA), and UV-vis spectrophotometry. Electrical properties, such as permittivity and leakage current density, are also studied. An exceptionally high growth rate of about 5 Å per cycle is achieved at 225-250 -C. The films are polycrystalline, the refractive indices vary between 1.57 and 1.61, and the permittivity is 12.3. The impurities detected in the LaF 3 film are Ti, C, O, and H. The level of all of these tends to decrease with increase in the deposition temperature, and is only 3.5 at.-% at 350 -C.

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Variable Nuclearity in Lanthanoid Coordination Chemistry

et al. 2014

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A series of lanthanoid and iodine containing compounds of formulae [Ln(IPhacac)3(dmf)2], [K(dmf)2{Ln(IPhacac)4}]n and [Ln5(OH)5(IPhacac)10] {(IPhacac) = bis(para‐iododibenzoyl)methanide} have been prepared and structurally characterised. X‐ray crystallography establishes that the compounds exist as monomers [Ln(IPhacac)3(dmf)2] {Ln = Pr (1), Nd (2), Tb (5), Dy (6)} and [Yb(IPhacac)3(dmf)2][Yb(IPhacac)3(dmf)(H2O)] (7) (dmf = N,N‐dimethylformamide), polymers [K(dmf)2{Ln(IPhacac)4}]n {Ln = Nd (2a), Eu (3a), Gd (4a), Tb (5a), Dy (6a)} and pentanuclear clusters [Ln5(OH)5(IPhacac)10] {Ln = Tb (5b), Dy (6b), Yb (7b)}.

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Laser operation of Nd:LaF ₃ thin film grownby molecular beam epitaxy

Cited by 34 publications

References 4 publications

Low phonon energy, Nd:LaF/sub 3/ channel waveguide lasers fabricated by molecular beam epitaxy

Low phonon energy, Nd:LaF/sub 3/ channel waveguide lasers fabricated by molecular beam epitaxy

Atomic Layer Deposition of LaF₃ Thin Films using La(thd)₃ and TiF₄ as Precursors

Variable Nuclearity in Lanthanoid Coordination Chemistry

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Laser operation of Nd:LaF 3 thin film grownby molecular beam epitaxy

Cited by 34 publications

References 4 publications

Low phonon energy, Nd:LaF/sub 3/ channel waveguide lasers fabricated by molecular beam epitaxy

Low phonon energy, Nd:LaF/sub 3/ channel waveguide lasers fabricated by molecular beam epitaxy

Atomic Layer Deposition of LaF3 Thin Films using La(thd)3 and TiF4 as Precursors

Variable Nuclearity in Lanthanoid Coordination Chemistry

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Laser operation of Nd:LaF ₃ thin film grownby molecular beam epitaxy

Atomic Layer Deposition of LaF₃ Thin Films using La(thd)₃ and TiF₄ as Precursors