Laser processing for thin film chalcogenide photovoltaics: a review and prospectus

Simonds, Brian J.; Meadows, Helen; Misra, Sudhajit; Ferekides, C.S.; Dale, Phillip J.; Scarpulla, Michael A.

doi:10.1117/1.jpe.5.050999

Cited by 37 publications

(11 citation statements)

References 86 publications

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“…Related phenomena have been observed in CdTe, Si, and TiO 2 at surfaces upon above-bandgap illumination. , 38,39,49 These vacancies can also be filled by dopant or alloying species, increasing the effectiveness of doping or alloying under otherwise unchanged growth conditions. Additionally, photoexcitation can produce non-equilibrium concentrations of electrons and holes, which can alter defect state populations directly through the energetics of defect charge states.…”

Section: Category 4 -Bulk Band To Band Absorption Resulting In Excessmentioning

confidence: 99%

Photoassisted physical vapor epitaxial growth of semiconductors: a review of light-induced modifications to growth processes

Alberi¹,

Scarpulla²

2017

J. Phys. D: Appl. Phys.

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Herein we review the remarkable range of modifications to materials properties associated with photoexcitation of the growth surface during physical vapor epitaxy of semiconductors. We concentrate on mechanisms producing measureable, utilizable changes in crystalline perfection, phase, composition, doping, and defect distribution. We outline the relevant physics of different mechanisms, concentrating on those yielding effects orthogonal to the primary growth variables of temperature and atomic or molecular fluxes and document the phenomenological effects reported.Based on experimental observations from a range of semiconductor systems and growth conditions, the primary effects include enhanced anion desorption, molecular dissociation, increased doping efficiency, modification to defect populations and improvements to the crystalline quality of epilayers grown at low temperatures. Future research directions and technological applications are also discussed.2

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Section: Category 4 -Bulk Band To Band Absorption Resulting In Excessmentioning

confidence: 99%

Photoassisted physical vapor epitaxial growth of semiconductors: a review of light-induced modifications to growth processes

Alberi¹,

Scarpulla²

2017

J. Phys. D: Appl. Phys.

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“…Simonds et al have provided a review of laser processing for thin-film CdTe and Cu (In;Ga) (S;Se) 2 (CIGS) used for solar cells (Simonds et al 2015). Laser annealing has been utilized to make ohmic contacts in CdTe solar cells (Simonds et al 2014).…”

Section: Ii-vi and Iii-v Semiconductor Thin-film Devicesmentioning

confidence: 99%

Laser-Induced Surface Modification for Photovoltaic Device Applications

Gupta¹

2020

Handbook of Laser Micro- And Nano-Engineering

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High-power lasers are extensively used for the fabrication of photovoltaic devices, medical devices, electronics and MEMS packaging, photonic device integration, consumer electronic devices such as smartphones, organic lightemitting diodes (OLED), and semiconductor devices and in the area of printed circuit boards. In the area of photovoltaic device fabrication, lasers are used for microtexturing of surfaces to improve light-trapping properties, laser doping to make n-and p-type semiconductors, electrical contacts, electrical isolation,

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“…These topics, and others, have recently been included in a complete review of laser annealing for thin film chalcogenide photovoltaics. 7 In this work, we show the effects of infrared continuous-wave (CW) laser light on device-quality CdTe. We find that even a relatively low flux of light is capable of annealing defects and improving carrier lifetime.…”

Section: Introductionmentioning

confidence: 99%

Reduction of Fermi level pinning and recombination at polycrystalline CdTe surfaces by laser irradiation

Simonds

Kheraj

Palekis

et al. 2015

Journal of Applied Physics

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Laser processing of polycrystalline CdTe is a promising approach that could potentially increase module manufacturing throughput while reducing capital expenditure costs. For these benefits to be realized, the basic effects of laser irradiation on CdTe must be ascertained. In this study, we utilize surface photovoltage spectroscopy (SPS) to investigate the changes to the electronic properties of the surface of polycrystalline CdTe solar cell stacks induced by continuous-wave laser annealing. The experimental data explained within a model consisting of two space charge regions, one at the CdTe/air interface and one at the CdTe/CdS junction, are used to interpret our SPS results. The frequency dependence and phase spectra of the SPS signal are also discussed. To support the SPS findings, low-temperature spectrally-resolved photoluminescence and time-resolved photoluminescence were also measured. The data show that a modest laser treatment of 250 W/cm 2 with a dwell time of 20 s is sufficient to reduce the effects of Fermi level pinning at the surface due to surface defects. V C 2015 AIP Publishing LLC. [http://dx.

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Laser processing for thin film chalcogenide photovoltaics: a review and prospectus

Cited by 37 publications

References 86 publications

Photoassisted physical vapor epitaxial growth of semiconductors: a review of light-induced modifications to growth processes

Photoassisted physical vapor epitaxial growth of semiconductors: a review of light-induced modifications to growth processes

Laser-Induced Surface Modification for Photovoltaic Device Applications

Reduction of Fermi level pinning and recombination at polycrystalline CdTe surfaces by laser irradiation

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