Laser processing of silicon for photovoltaics and structural phase transformation

Sun, Zeming; Gupta, Mool C.

doi:10.1016/j.apsusc.2018.06.092

Cited by 20 publications

(16 citation statements)

References 54 publications

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“…At the average optical output power of 5 W as shows in Fig. 6, the beam propagation ratios get the values of M 2 1/e 2 = 4.7, M 2 95% = 7.3, and M 2 2.mom = 7.9. The power content profile is integrated from beam profile starting at the center of gravity, until the sum reaches where the intensity drops to 1/e 2 of the maximum intensity, P CL = 68%.…”

Section: Resultsmentioning

confidence: 94%

“…High-power pulsed lasers emitting at 1064 nm have been requested for many applications such as health-care [1], material processing [2], free-space measurement, environmental research [3][4][5][6]. Especially, in the remote sensing technique for detection of important components of the atmosphere or distance measurements in LIght Detection And Ranging (LIDAR), the 1064 nm laser sources play an important role because of their short pulse duration and high power delivery.…”

Section: Introductionmentioning

confidence: 99%

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Characterization of High-power DFB-MOPA Diode Lasers Emitting at 1064 nm

Nguyen¹

2019

Comm. in Phys.

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Detail characterization of the such laser diode is important for the applications. Electro-Optical and spectral characteristics of the high power 1064 nm DFB-MOPA lasers are investigated at room temperature as function of injection current. Beam quality is characterized by waist diameter and far-field divergence angle versus average optical output power. Beam propagation ratio M2 is defined at difference intensity levels from lateral beam profile giving more detail laser behaviors at high power.

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Section: Resultsmentioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

Characterization of High-power DFB-MOPA Diode Lasers Emitting at 1064 nm

Nguyen¹

2019

Comm. in Phys.

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“…Investigations using femtosecond (Amer et al 2005;Bonse et al 2002;Crouch et al 2004;Jia et al 2004), picosecond (Liu et al 1981), and nanosecond (Tsu et al 1979;Amer et al 2005;Crouch et al 2004;Sun and Gupta 2018b) laser systems have all reported the amorphization of the c-Si surface after the laser processing. It is necessary to clarify the laser modification regimes, including but not limited to melting and ablation (removal of material).…”

Section: Effect Of Laser Pulse Durationmentioning

confidence: 99%

“…In contrast, laser ablation causes a complicated physical scenario that is not yet fully understood. In the ablation regime, the amorphous phase generation via laser processing with pulse durations of 30-50 ns has been widely reported (Amer et al 2005;Crouch et al 2004;Sun and Gupta 2018b). Laser ablation is essential to many practical laser-enabled applications.…”

Section: Effect Of Laser Pulse Durationmentioning

confidence: 99%

Generation and Annealing of Crystalline Disorder in Laser Processing of Silicon

Gupta¹,

Zhigilei²,

He³

et al. 2020

Handbook of Laser Micro- And Nano-Engineering

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The laser-induced crystalline disorder in silicon has attracted increasing interest due to its impact on the device performance of Si-based solar energy, optoelectronic, and electronic devices. Combined experimental and simulation approaches are effective for investigation of the fundamental mechanisms responsible for the formation of amorphous phase, polycrystalline structure, and crystal defects in the course of laser processing. In this chapter, the effects of laser pulse duration, wavelength, and fluence on the spatial distribution and concentration of point defects and dislocations, as well as the thickness and morphology of amorphous regions, are discussed based on the results of computer modeling and experiments. The laser-based thermal annealing is also considered as an effective technique for mitigating the laser-induced disorder. Overall, this chapter provides an up-to-date review of the disorder generation in laser-processed silicon and highlights the laser annealing technique for the disorder removal in silicon photovoltaic, optoelectronic, and electronic devices.

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“…Figure 25(Sun and Gupta 2018b) shows transmission electron microscope images of 1064 nm wavelength laser-processed Si,…”

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confidence: 99%

Laser-Induced Surface Modification for Photovoltaic Device Applications

Gupta¹

2020

Handbook of Laser Micro- And Nano-Engineering

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High-power lasers are extensively used for the fabrication of photovoltaic devices, medical devices, electronics and MEMS packaging, photonic device integration, consumer electronic devices such as smartphones, organic lightemitting diodes (OLED), and semiconductor devices and in the area of printed circuit boards. In the area of photovoltaic device fabrication, lasers are used for microtexturing of surfaces to improve light-trapping properties, laser doping to make n-and p-type semiconductors, electrical contacts, electrical isolation,

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Laser processing of silicon for photovoltaics and structural phase transformation

Cited by 20 publications

References 54 publications

Characterization of High-power DFB-MOPA Diode Lasers Emitting at 1064 nm

Characterization of High-power DFB-MOPA Diode Lasers Emitting at 1064 nm

Generation and Annealing of Crystalline Disorder in Laser Processing of Silicon

Laser-Induced Surface Modification for Photovoltaic Device Applications

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