2012
DOI: 10.1117/1.jmm.11.2.021114
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Laser-produced plasma light source for extreme-ultraviolet lithography applications

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Cited by 32 publications
(12 citation statements)
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“…The repetition rate was set to 6 kHz, which is a representative frequency for metrology applications. 1 The laser beam signal was detected by a photodiode placed in the vicinity of the beamline. This signal was used for temporal synchronization between the different radiation and charged particles detectors.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…The repetition rate was set to 6 kHz, which is a representative frequency for metrology applications. 1 The laser beam signal was detected by a photodiode placed in the vicinity of the beamline. This signal was used for temporal synchronization between the different radiation and charged particles detectors.…”
Section: Methodsmentioning
confidence: 99%
“…Sources of EUV with a wavelength range centered at 13.5 nm are mainly studied for next generation semiconductor lithography and metrology applications. 1 The wavelength of 13.5 nm is determined by the optimum reflectivity of the focusing mirrors that collect the EUV radiation. The mirrors for normal incidence are Bragg reflectors and are made of multilayers (ML), where the thickness of the layers is dependent on the selected materials.…”
Section: Introductionmentioning
confidence: 99%
“…In order to produce a commercially viable EUV metrology source for mask inspection using laser-produced plasma (LPP) the challenging goal of brightness higher than 100 W/mm 2 sr has to be achieved [4]. The etendue should be expected on the order of 0.03 mm 2 sr.…”
Section: Introductionmentioning
confidence: 99%
“…The selection of tin (Sn) based EUV source at 13.5 nm is due to the availability of Mo/Si multilayer (ML) mirrors which reflect ~ 70% of radiation at normal incidence with the 2% BW centered at 13.5 nm [3]. A critical requirement for semiconductor manufacturing infrastructure is mask inspection at the actinic wavelength in order to detect small defects, which would otherwise print onto the wafer, resulting in an unacceptable yield [4]. Actinic metrology is required to predict printing behavior of hot spot in the mask pattern.…”
Section: Introductionmentioning
confidence: 99%
“…Nozzles that operate close to or at rarefied condition (Kn > 0.01) and at low Re numbers (typically, Re < 500) are becoming increasingly important for a number of applications, including as propulsion systems for microspacecraft, 1-3 for refueling high temperature fusion plasmas, 4,5 and as protection mechanisms against third particles. 6,7 The goal of these systems is to generate a jet with the maximum possible momentum in a desired direction. In the first case, the optimization of the momentum maximizes the thrust directly, in the second case, it maximizes the fueling efficiency, and in the third case, it maximizes the protection efficiency and the confinement of the jet.…”
Section: Introductionmentioning
confidence: 99%