2022
DOI: 10.1021/acsami.2c07451
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Laser-Reduced BiVO4 for Enhanced Photoelectrochemical Water Splitting

Abstract: The present study proposes a laser irradiation method to superficially reduce BiVO4 photoelectrodes and boost their water oxidation reaction performance. The origin of this enhanced performance toward oxygen evolution reaction (OER) was studied using a combination of a suite of structural, chemical, and mechanistic advanced characterization techniques including X-ray photoelectron (XPS), X-ray absorption spectroscopy (XAS), electrochemical impedance spectroscopy (EIS), and transient absorption spectroscopy (TA… Show more

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Cited by 21 publications
(14 citation statements)
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“…The Ni:FeOOH-Vo/BiVO 4 photoanode exhibits an IPCE value of ∼79% at 400 nm, which is ∼1.34 and 3.01 times higher than the FeOOH-Vo/BiVO 4 and pristine BiVO 4 photoanodes, respectively. From the IPCE curves, the corresponding integrated photocurrent density values were estimated (Figure S8), and the obtained results are consistent with the reported literature. In addition, their calculated half-cell applied bias photon to current efficiencies (ABPEs) are presented in Figure c. The ABPE of the Ni:FeOOH-Vo/BiVO 4 photoanode could reach 1.62% at 0.71 V RHE , which is significantly higher than the FeOOH-Vo/BiVO 4 (0.76% at 0.71 V RHE ) and pristine BiVO 4 (0.18% at 0.71 V RHE ).…”
Section: Resultssupporting
confidence: 86%
“…The Ni:FeOOH-Vo/BiVO 4 photoanode exhibits an IPCE value of ∼79% at 400 nm, which is ∼1.34 and 3.01 times higher than the FeOOH-Vo/BiVO 4 and pristine BiVO 4 photoanodes, respectively. From the IPCE curves, the corresponding integrated photocurrent density values were estimated (Figure S8), and the obtained results are consistent with the reported literature. In addition, their calculated half-cell applied bias photon to current efficiencies (ABPEs) are presented in Figure c. The ABPE of the Ni:FeOOH-Vo/BiVO 4 photoanode could reach 1.62% at 0.71 V RHE , which is significantly higher than the FeOOH-Vo/BiVO 4 (0.76% at 0.71 V RHE ) and pristine BiVO 4 (0.18% at 0.71 V RHE ).…”
Section: Resultssupporting
confidence: 86%
“…On the other hand, the charge-transfer resistances of both samples (Figure c) decrease under illumination, as expected for a photoelectrode. Additionally, under dark and illumination conditions, the Mo-doped sample shows lower values of R ct along the whole potential window, in good agreement with its higher photocurrent. Furthermore, both samples show a clear decrease in the capacitance with the applied potential (Figure d), as a consequence of an enhanced extraction of the photogenerated holes from the semiconducting absorber to the electrolyte, as expected for an n-type semiconductor. , Mo-doped TiO 2 shows higher capacitance values along the whole potential window, which can be related to a higher density of photogenerated holes. This difference is especially noticeable at low applied bias, in which photogenerated carriers are mainly accumulated at the photoelectrode/electrolyte interface before driving the catalytic reaction …”
Section: Resultssupporting
confidence: 52%
“…In general, the smaller the impedance arc radius, the lower the interface resistance, and thus the higher the electron-transfer efficiency. 30 As can be seen from Figure 3B, the impedance arc of BiOIO 3 /GSH was smaller than that of pristine BiOIO 3 , denoting its higher electron-transfer efficiency. In addition, we also explored the photogenerated charge-transfer dynamics using PL and TRPL measurements.…”
Section: ■ Introductionmentioning
confidence: 86%